Investigation of p-type depletion doping for InGaN/GaN-based light-emitting diodes

Zhang, Yiping1; Zhang, Zi-Hui1,2; Tan, Swee Tiam1; Hernandez-Martinez, Pedro Ludwig1; Zhu, Binbin1; Lu, Shunpeng1; Kang, Xue Jun1; Sun, Xiao Wei3; Demir, Hilmi Volkan1,4,5,6,7

2017-01-16

10.1063/1.4973743

APPLIED PHYSICS LETTERS   影响因子和分区

0003-6951

1077-3118

Due to the limitation of the hole injection, p-type doping is essential to improve the performance of InGaN/GaN multiple quantum well light-emitting diodes (LEDs). In this work, we propose and show a depletion-region Mg-doping method. Here we systematically analyze the effectiveness of different Mg-doping profiles ranging from the electron blocking layer to the active region. Numerical computations show that the Mg-doping decreases the valence band barrier for holes and thus enhances the hole transportation. The proposed depletion-region Mg-doping approach also increases the barrier height for electrons, which leads to a reduced electron overflow, while increasing the hole concentration in the p-GaN layer. Experimentally measured external quantum efficiency indicates that Mg-doping position is vitally important. The doping in or adjacent to the quantum well degrades the LED performance due to Mg diffusion, increasing the corresponding nonradiative recombination, which is well supported by the measured carrier lifetimes. The experimental results are well numerically reproduced by modifying the nonradiative recombination lifetimes, which further validate the effectiveness of our approach. Published by AIP Publishing.

SCI ; EI

英语

NI论文

通讯

National Natural Science Foundation of China[61674074]

Physics

Physics, Applied

WOS:000392836900044

AMER INST PHYSICS

20170503296613

Charge injection ; Hole concentration ; III-V semiconductors ; Light emitting diodes

Electricity: Basic Concepts and Phenomena:701.1 ; Semiconductor Devices and Integrated Circuits:714.2

PHYSICS

Web of Science

1.Nanyang Technol Univ, Sch Elect & Elect Engn, Luminous Ctr Excellence Semicond Lighting & Displ, 50 Nanyang Ave, Singapore 639798, Singapore
2.Hebei Univ Technol, Key Lab Elect Mat & Devices Tianjin, Sch Elect & Informat Engn, 5340 Xiping Rd, Tianjin 300401, Peoples R China
3.Southern Univ Sci & Technol, Coll Engn, Dept Elect & Elect Engn, 1088 Xueyuan Rd, Shenzhen 518055, Guangdong, Peoples R China
4.Nanyang Technol Univ, Sch Phys & Math Sci, 21 Nanyang Link, Singapore 637371, Singapore
5.Bilkent Univ, Dept Elect & Elect, Dept Phys, TR-06800 Ankara, Turkey
6.Bilkent Univ, UNAM Natl Nanotechnol Res Ctr, TR-06800 Ankara, Turkey
7.Bilkent Univ, Inst Mat Sci & Nanotechnol, TR-06800 Ankara, Turkey

Zhang, Yiping,Zhang, Zi-Hui,Tan, Swee Tiam,et al. Investigation of p-type depletion doping for InGaN/GaN-based light-emitting diodes[J]. APPLIED PHYSICS LETTERS,2017,110(3).

Zhang, Yiping.,Zhang, Zi-Hui.,Tan, Swee Tiam.,Hernandez-Martinez, Pedro Ludwig.,Zhu, Binbin.,...&Demir, Hilmi Volkan.(2017).Investigation of p-type depletion doping for InGaN/GaN-based light-emitting diodes.APPLIED PHYSICS LETTERS,110(3).

Zhang, Yiping,et al."Investigation of p-type depletion doping for InGaN/GaN-based light-emitting diodes".APPLIED PHYSICS LETTERS 110.3(2017).