中文版 | English
题名

Interface Engineering of Domain Structures in BiFeO3 Thin Films

作者
通讯作者Chen, Deyang; Gao, Xingsen; Zeng, Dechang
发表日期
2017-01
DOI
发表期刊
ISSN
1530-6984
EISSN
1530-6992
卷号17期号:1页码:486-493
摘要

A wealth of fascinating phenomena have been discovered at the BiFeO3 domain walls, examples such as domain wall conductivity, photovoltaic effects, and magneto electric coupling. Thus, the ability to precisely control the domain structures and accurately study their switching behaviors is critical to realize the next generation of novel devices based on domain wall functionalities. In this work, the introduction of a dielectric layer leads to the tunability of the depolarization field both in the multilayers and superlattices, which provides a novel approach to control the domain patterns of BiFeO3 films. Moreover, we are able to study the switching behavior of the first time obtained periodic 109 degrees stripe domains with a thick bottom electrode. Besides, the precise controlling of pure 71 degrees and 109 degrees periodic stripe domain walls enable us to make a clear demonstration that the exchange bias in the ferromagnet/BiFeO3 system originates from 109 degrees domain walls. Our findings provide future directions to study the room temperature electric field control of exchange bias and open a new pathway to explore the room temperature multiferroic vortices in the BiFeO3 system.

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语种
英语
重要成果
NI论文
学校署名
其他
资助项目
Science and Technology Program of Guangzhou[2016201604030070]
WOS研究方向
Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目
Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号
WOS:000392036600068
出版者
EI入藏号
20200908229903
EI主题词
Bismuth Compounds ; Depolarization ; Domain Walls ; Electric Fields ; Film Preparation ; Multiferroics ; Photovoltaic Effects ; Superlattices
EI分类号
Electricity: Basic Concepts And Phenomena:701.1 ; Crystalline Solids:933.1
ESI学科分类
MATERIALS SCIENCE
来源库
Web of Science
引用统计
被引频次[WOS]:70
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/29292
专题理学院_物理系
作者单位
1.South China Normal Univ, Inst Adv Mat, Guangzhou 510006, Guangdong, Peoples R China
2.South China Normal Univ, Guangdong Prov Key Lab Quantum Engn & Quantum Mat, Guangzhou 510006, Guangdong, Peoples R China
3.Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
4.South China Univ Technol, Sch Mat Sci & Engn, Guangzhou 510640, Guangdong, Peoples R China
5.Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA
6.Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China
7.South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China
8.Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
9.Nanjing Univ, Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
10.Nanjing Univ, Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China
11.Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
推荐引用方式
GB/T 7714
Chen, Deyang,Chen, Zuhuang,He, Qian,et al. Interface Engineering of Domain Structures in BiFeO3 Thin Films[J]. NANO LETTERS,2017,17(1):486-493.
APA
Chen, Deyang.,Chen, Zuhuang.,He, Qian.,Clarkson, James D..,Serrao, Claudy R..,...&Bokor, Jeffrey.(2017).Interface Engineering of Domain Structures in BiFeO3 Thin Films.NANO LETTERS,17(1),486-493.
MLA
Chen, Deyang,et al."Interface Engineering of Domain Structures in BiFeO3 Thin Films".NANO LETTERS 17.1(2017):486-493.
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acs.nanolett.6b04512(2471KB)----限制开放--
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