题名 | Interface Engineering of Domain Structures in BiFeO3 Thin Films |
作者 | |
通讯作者 | Chen, Deyang; Gao, Xingsen; Zeng, Dechang |
发表日期 | 2017-01
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DOI | |
发表期刊 | |
ISSN | 1530-6984
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EISSN | 1530-6992
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卷号 | 17期号:1页码:486-493 |
摘要 | A wealth of fascinating phenomena have been discovered at the BiFeO3 domain walls, examples such as domain wall conductivity, photovoltaic effects, and magneto electric coupling. Thus, the ability to precisely control the domain structures and accurately study their switching behaviors is critical to realize the next generation of novel devices based on domain wall functionalities. In this work, the introduction of a dielectric layer leads to the tunability of the depolarization field both in the multilayers and superlattices, which provides a novel approach to control the domain patterns of BiFeO3 films. Moreover, we are able to study the switching behavior of the first time obtained periodic 109 degrees stripe domains with a thick bottom electrode. Besides, the precise controlling of pure 71 degrees and 109 degrees periodic stripe domain walls enable us to make a clear demonstration that the exchange bias in the ferromagnet/BiFeO3 system originates from 109 degrees domain walls. Our findings provide future directions to study the room temperature electric field control of exchange bias and open a new pathway to explore the room temperature multiferroic vortices in the BiFeO3 system. |
关键词 | |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
|
重要成果 | NI论文
|
学校署名 | 其他
|
资助项目 | Science and Technology Program of Guangzhou[2016201604030070]
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WOS研究方向 | Chemistry
; Science & Technology - Other Topics
; Materials Science
; Physics
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WOS类目 | Chemistry, Multidisciplinary
; Chemistry, Physical
; Nanoscience & Nanotechnology
; Materials Science, Multidisciplinary
; Physics, Applied
; Physics, Condensed Matter
|
WOS记录号 | WOS:000392036600068
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出版者 | |
EI入藏号 | 20200908229903
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EI主题词 | Bismuth Compounds
; Depolarization
; Domain Walls
; Electric Fields
; Film Preparation
; Multiferroics
; Photovoltaic Effects
; Superlattices
|
EI分类号 | Electricity: Basic Concepts And Phenomena:701.1
; Crystalline Solids:933.1
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ESI学科分类 | MATERIALS SCIENCE
|
来源库 | Web of Science
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引用统计 |
被引频次[WOS]:70
|
成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/29292 |
专题 | 理学院_物理系 |
作者单位 | 1.South China Normal Univ, Inst Adv Mat, Guangzhou 510006, Guangdong, Peoples R China 2.South China Normal Univ, Guangdong Prov Key Lab Quantum Engn & Quantum Mat, Guangzhou 510006, Guangdong, Peoples R China 3.Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA 4.South China Univ Technol, Sch Mat Sci & Engn, Guangzhou 510640, Guangdong, Peoples R China 5.Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA 6.Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China 7.South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China 8.Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA 9.Nanjing Univ, Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China 10.Nanjing Univ, Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China 11.Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA |
推荐引用方式 GB/T 7714 |
Chen, Deyang,Chen, Zuhuang,He, Qian,et al. Interface Engineering of Domain Structures in BiFeO3 Thin Films[J]. NANO LETTERS,2017,17(1):486-493.
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APA |
Chen, Deyang.,Chen, Zuhuang.,He, Qian.,Clarkson, James D..,Serrao, Claudy R..,...&Bokor, Jeffrey.(2017).Interface Engineering of Domain Structures in BiFeO3 Thin Films.NANO LETTERS,17(1),486-493.
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MLA |
Chen, Deyang,et al."Interface Engineering of Domain Structures in BiFeO3 Thin Films".NANO LETTERS 17.1(2017):486-493.
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条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | 操作 | |
acs.nanolett.6b04512(2471KB) | -- | -- | 限制开放 | -- |
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