2D hetero-nanosheets to enable ultralow thermal conductivity by all scale phonon scattering for highly thermoelectric performance

Li, Shuankui1; Xin, Chao1; Liu, Xuerui1; Feng, Yancong1; Liu, Yidong1; Zheng, Jiaxin1; Liu, Fusheng2,3; Huang, Qingzhen4; Qiu, Yiming4; He, Jiaqing5; Luo, Jun1; Pan, Feng1

2016-12

10.1016/j.nanoen.2016.09.018

Nano Energy   影响因子和分区

2211-2855

2211-3282

It remains a great challenge to design thermoelectric materials with high figure of merit ZT because of the strongly correlated material parameters such as the electrical conductivity, thermal conductivity, and Seebeck coefficient, which restricts the maximum ZT values to similar to 1 in bulk thermoelectric materials. Here, we demonstrate a strategy based on nanostructuring and alloying to synthesize the two-dimensional (2D) Bi2Te2.7S0.3/Bi2Te3 hetero-nanosheet with atomically thin heterojunction interfaces to optimize the electron and phonon transport behavior. A full-spectrum phonons scattering has been achieved to enable ultralow thermal conductivity by the atomic-scale alloy and defect to target high frequency phonons, heterojunction interface to target mid-frequency phonons, and nanoscale grains boundary to target low-frequency phonons. With this technique, the lattice thermal conductivity (K-latt) is dramatically reduced to 0.2-0.3 W m(-1) K-1 near the lower limit of the randomly oriented K-latt (0.18 W m(-1) K-1), but the electrical transport properties is well maintained. Taking advantage of the maximumly reduced thermal conductivity as well as the maintained power factors, the maximum ZT reaches 1.17 and 0.9 at 450 K and around room temperature, respectively, approximately three times higher than their counterparts without atomically thin heterostructure.

Thermoelectric materials Bi2Te3 Nanostructure Heterogeneous Phonon scattering

SCI ; EI

英语

其他

Shenzhen Science and Technology Research Grant[ZDSY20130331145131323]

Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics

Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied

WOS:000390636100089

ELSEVIER SCIENCE BV

20164903088993

Bismuth compounds ; Heterojunctions ; Nanosheets ; Nanostructures ; Phonon scattering ; Phonons ; Thermoelectric equipment ; Thermoelectricity

Thermoelectric Energy:615.4 ; Thermodynamics:641.1 ; Electricity: Basic Concepts and Phenomena:701.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Nanotechnology:761 ; Solid State Physics:933

Web of Science

1.Peking Univ, Shenzhen Grad Sch, Sch Adv Mat, Shenzhen 518055, Peoples R China
2.Shenzhen Univ, Coll Mat Sci & Engn, Shenzhen 518060, Peoples R China
3.Shenzhen Key Lab Special Funct Mat, Shenzhen 518060, Peoples R China
4.NIST, Ctr Neutron Res, Gaithersburg, MD 20899 USA
5.South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China

Li, Shuankui,Xin, Chao,Liu, Xuerui,et al. 2D hetero-nanosheets to enable ultralow thermal conductivity by all scale phonon scattering for highly thermoelectric performance[J]. Nano Energy,2016,30:780-789.

Li, Shuankui.,Xin, Chao.,Liu, Xuerui.,Feng, Yancong.,Liu, Yidong.,...&Pan, Feng.(2016).2D hetero-nanosheets to enable ultralow thermal conductivity by all scale phonon scattering for highly thermoelectric performance.Nano Energy,30,780-789.

Li, Shuankui,et al."2D hetero-nanosheets to enable ultralow thermal conductivity by all scale phonon scattering for highly thermoelectric performance".Nano Energy 30(2016):780-789.