Strain-Gradient Modulated Exciton Emission in Bent ZnO Wires Probed by Cathodoluminescence

Fu, Xue-Wen2; Li, Cai-Zhen2; Fang, Liang1; Liu, Da-Meng1; Xu, Jun3; Yu, Da-Peng4; Liao, Zhi-Min2,5

2016-12

10.1021/acsnano.6b07206

ACS Nano   影响因子和分区

1936-0851

1936-086X

Photoelectrical properties of semiconductor nano structures are expected to be improved significantly by strain engineering. Besides the local strain, the strain gradient is promising to tune the luminescence properties by modifying the crystal symmetry. Here, we report the investigation of strain gradient induced symmetry-breaking effect on excitonic states in pure bending ZnO microwires by high spatial-resolved cathodo-luminescence at low temperature of 80 K. In addition to the local strain induced light emission peak shift, the bound exciton emission photon energy shows an extraordinary jump of similar to 16.6 meV at a high strain-gradient of 1.22% mu m(-1), which is ascribed to the strain gradient induced symmetry-breaking. Such a symmetry breaking lifts the energy degeneracy of the electronic band structures, which significantly modifies the electron hole interactions and the fine structures of the bound exciton states. These results provide a further understanding of the strain gradient effect on the excitonic states and possess a potential for the applications in optoelectronic devices.

strain semiconductor nanowires symmetry breaking luminescence

SCI ; EI

英语

NI论文

其他

NSFC[11274014] ; NSFC[11234001] ; NSFC[51575298] ; NSFC[51527901]

Chemistry ; Science & Technology - Other Topics ; Materials Science

Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary

WOS:000391079700094

AMER CHEMICAL SOC

20170103222035

Cathodoluminescence ; Excitons ; II-VI semiconductors ; Luminescence ; Optoelectronic devices ; Strain ; Temperature ; Wide band gap semiconductors ; Zinc oxide

Thermodynamics:641.1 ; Light/Optics:741.1 ; Optical Devices and Systems:741.3 ; Inorganic Compounds:804.2 ; Crystal Lattice:933.1.1 ; Materials Science:951

Web of Science

1.Tsinghua Univ, State Key Lab Tribol, Beijing 100084, Peoples R China
2.Peking Univ, Sch Phys, Dept Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China
3.Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing 100871, Peoples R China
4.South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China
5.Collaborat Innovat Ctr Quantum Matter, Beijing 100190, Peoples R China

Fu, Xue-Wen,Li, Cai-Zhen,Fang, Liang,et al. Strain-Gradient Modulated Exciton Emission in Bent ZnO Wires Probed by Cathodoluminescence[J]. ACS Nano,2016,10(12):11469-11474.

Fu, Xue-Wen.,Li, Cai-Zhen.,Fang, Liang.,Liu, Da-Meng.,Xu, Jun.,...&Liao, Zhi-Min.(2016).Strain-Gradient Modulated Exciton Emission in Bent ZnO Wires Probed by Cathodoluminescence.ACS Nano,10(12),11469-11474.

Fu, Xue-Wen,et al."Strain-Gradient Modulated Exciton Emission in Bent ZnO Wires Probed by Cathodoluminescence".ACS Nano 10.12(2016):11469-11474.