| 题名 | Hybrid Open Drain Method and Fully Current-Based Characterization of Asymmetric Resistance Components in a Single MOSFET |
| 作者 | |
| 通讯作者 | Kim, Dong Myong |
| 发表日期 | 2016-11
|
| DOI | |
| 发表期刊 | |
| ISSN | 1557-9646
|
| 卷号 | 63期号:11页码:4196-4200 |
| 关键词 | |
| 相关链接 | [IEEE记录] |
| 收录类别 | |
| 学校署名 | 其他
|
| EI入藏号 | 20164502996251
|
| EI主题词 | Drain current
; MOSFET devices
; Substrates
|
| EI分类号 | Semiconductor Devices and Integrated Circuits:714.2
; Chemical Operations:802.3
|
| ESI学科分类 | ENGINEERING
|
| 来源库 | IEEE
|
| 全文链接 | https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7576617 |
| 引用统计 |
被引频次[WOS]：7
|
| 成果类型 | 期刊论文 |
| 条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/29388 |
| 专题 | 工学院_电子与电气工程系 |
| 作者单位 | 1.Kookmin Univ, Sch Elect Engn, Seoul 136702, South Korea 2.Southern Univ Sci & Technol China, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China |
| 推荐引用方式 GB/T 7714 |
Kim, Jaewon,Lee, Heesung,Kim, Seong Kwang,et al. Hybrid Open Drain Method and Fully Current-Based Characterization of Asymmetric Resistance Components in a Single MOSFET[J]. IEEE Transactions on Electron Devices,2016,63(11):4196-4200.
|
| APA |
Kim, Jaewon.,Lee, Heesung.,Kim, Seong Kwang.,Kim, Junyeap.,Park, Jaewon.,...&Kim, Dong Myong.(2016).Hybrid Open Drain Method and Fully Current-Based Characterization of Asymmetric Resistance Components in a Single MOSFET.IEEE Transactions on Electron Devices,63(11),4196-4200.
|
| MLA |
Kim, Jaewon,et al."Hybrid Open Drain Method and Fully Current-Based Characterization of Asymmetric Resistance Components in a Single MOSFET".IEEE Transactions on Electron Devices 63.11(2016):4196-4200.
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| 条目包含的文件 | ||||||
| 文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | 操作 | |
| 07576617.pdf（1344KB） | -- | -- | 限制开放 | -- | ||
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