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题名

A very dark-and-conductive electrode based on Mo/MoOx/ITO structure

作者
通讯作者Chen, Shuming
发表日期
2016-10-30
DOI
发表期刊
ISSN
0169-4332
EISSN
1873-5584
卷号384页码:348-352
摘要
A dark and conductive electrode based on Mo/MoOx/ITO structure with low resistivity of 1.93 x 10(-4) Omega/cm was fabricated by magnetron sputtering. The demonstrated dark electrode exhibits a low reflectance of 2.4-12.9% within the visible spectral range and average luminous reflectance of 3.3%. To improve the conductivity, pure Mo was first sputtered, followed by depositing a dark and conductive Mo0 by introducing 02 flow during Mo sputtering. In order to further reduce the reflectance and set the lowest reflectance at the wavelength of 550 nm, which is most sensitive to human eyes, an ITO phase changing layer was introduced on top of the MoOx. The demonstrated dark and conductive electrode can serve as bottom contact and can potentially replace the circular polarizer for high contrast top-emitting organic light-emitting diodes. (C) 2016 Elsevier B.V. All rights reserved.
关键词
相关链接[来源记录]
收录类别
SCI ; EI
语种
英语
学校署名
第一 ; 通讯
资助项目
Guangdong Natural Science Fund for Distinguished Young Scholar[2016A030306017]
WOS研究方向
Chemistry ; Materials Science ; Physics
WOS类目
Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
WOS记录号
WOS:000378560900043
出版者
EI入藏号
20162302463595
EI主题词
Molybdenum ; Molybdenum oxide ; Organic light emitting diodes (OLED) ; Reflection
EI分类号
Molybdenum and Alloys:543.3 ; Semiconductor Devices and Integrated Circuits:714.2 ; Chemical Products Generally:804
ESI学科分类
MATERIALS SCIENCE
来源库
Web of Science
引用统计
被引频次[WOS]:0
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/29396
专题工学院_电子与电气工程系
作者单位
Southern Univ Sci & Technol, Shenzhen Key Lab Generat Semicond Devices 3, Dept Elect & Elect Engn, Shenzhen 518055, Guangdong, Peoples R China
第一作者单位电子与电气工程系
通讯作者单位电子与电气工程系
第一作者的第一单位电子与电气工程系
推荐引用方式
GB/T 7714
Feng, Yuanxiang,Chen, Shuming. A very dark-and-conductive electrode based on Mo/MoOx/ITO structure[J]. APPLIED SURFACE SCIENCE,2016,384:348-352.
APA
Feng, Yuanxiang,&Chen, Shuming.(2016).A very dark-and-conductive electrode based on Mo/MoOx/ITO structure.APPLIED SURFACE SCIENCE,384,348-352.
MLA
Feng, Yuanxiang,et al."A very dark-and-conductive electrode based on Mo/MoOx/ITO structure".APPLIED SURFACE SCIENCE 384(2016):348-352.
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