题名 | A very dark-and-conductive electrode based on Mo/MoOx/ITO structure |
作者 | |
通讯作者 | Chen, Shuming |
发表日期 | 2016-10-30
|
DOI | |
发表期刊 | |
ISSN | 0169-4332
|
EISSN | 1873-5584
|
卷号 | 384页码:348-352 |
摘要 | A dark and conductive electrode based on Mo/MoOx/ITO structure with low resistivity of 1.93 x 10(-4) Omega/cm was fabricated by magnetron sputtering. The demonstrated dark electrode exhibits a low reflectance of 2.4-12.9% within the visible spectral range and average luminous reflectance of 3.3%. To improve the conductivity, pure Mo was first sputtered, followed by depositing a dark and conductive Mo0 by introducing 02 flow during Mo sputtering. In order to further reduce the reflectance and set the lowest reflectance at the wavelength of 550 nm, which is most sensitive to human eyes, an ITO phase changing layer was introduced on top of the MoOx. The demonstrated dark and conductive electrode can serve as bottom contact and can potentially replace the circular polarizer for high contrast top-emitting organic light-emitting diodes. (C) 2016 Elsevier B.V. All rights reserved. |
关键词 | |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
|
学校署名 | 第一
; 通讯
|
资助项目 | Guangdong Natural Science Fund for Distinguished Young Scholar[2016A030306017]
|
WOS研究方向 | Chemistry
; Materials Science
; Physics
|
WOS类目 | Chemistry, Physical
; Materials Science, Coatings & Films
; Physics, Applied
; Physics, Condensed Matter
|
WOS记录号 | WOS:000378560900043
|
出版者 | |
EI入藏号 | 20162302463595
|
EI主题词 | Molybdenum
; Molybdenum oxide
; Organic light emitting diodes (OLED)
; Reflection
|
EI分类号 | Molybdenum and Alloys:543.3
; Semiconductor Devices and Integrated Circuits:714.2
; Chemical Products Generally:804
|
ESI学科分类 | MATERIALS SCIENCE
|
来源库 | Web of Science
|
引用统计 |
被引频次[WOS]:0
|
成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/29396 |
专题 | 工学院_电子与电气工程系 |
作者单位 | Southern Univ Sci & Technol, Shenzhen Key Lab Generat Semicond Devices 3, Dept Elect & Elect Engn, Shenzhen 518055, Guangdong, Peoples R China |
第一作者单位 | 电子与电气工程系 |
通讯作者单位 | 电子与电气工程系 |
第一作者的第一单位 | 电子与电气工程系 |
推荐引用方式 GB/T 7714 |
Feng, Yuanxiang,Chen, Shuming. A very dark-and-conductive electrode based on Mo/MoOx/ITO structure[J]. APPLIED SURFACE SCIENCE,2016,384:348-352.
|
APA |
Feng, Yuanxiang,&Chen, Shuming.(2016).A very dark-and-conductive electrode based on Mo/MoOx/ITO structure.APPLIED SURFACE SCIENCE,384,348-352.
|
MLA |
Feng, Yuanxiang,et al."A very dark-and-conductive electrode based on Mo/MoOx/ITO structure".APPLIED SURFACE SCIENCE 384(2016):348-352.
|
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | 操作 | |
Feng-2016-A very dar(1359KB) | -- | -- | 限制开放 | -- |
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