Transparent Indium Tin Oxide Electrodes on Muscovite Mica for High-Temperature-Processed Flexible Optoelectronic Devices

Ke, Shanming1,3; Chen, Chang1; Fu, Nianqing4; Zhou, Hua1; Ye, Mao1; Lin, Peng1; Yuan, Wenxiang2; Zeng, Xierong1; Chen, Lang5; Huang, Haitao6,7

2016-10-26

10.1021/acsami.6b09166

ACS Applied Materials & Interfaces   影响因子和分区

1944-8244

Sn-doped In2O3 (ITO) electrodes were deposited on transparent and flexible muscovite mica. The use of mica substrate makes a high-temperature annealing process (up to 500 degrees C) possible. ITO/mica retains its low electric resistivity even after continuous bending of 1000 times on account of the unique layered structure of mica. When used as a transparent flexible heater, ITO/mica shows an extremely fast ramping (<15 s) up to a high temperature of over 438 degrees C. When used as a transparent electrode, ITO/mica permits a high-temperature annealing (450 degrees C) approach to fabricate flexible perovskite solar cells (PSCs) with high efficiency.

flexible electronics mica transparent heaters flexible perovskite solar cells high temperature process

SCI ; EI

英语

其他

Hong Kong Polytechnic University[G-UC71] ; Hong Kong Polytechnic University[G-YBB8] ; Hong Kong Polytechnic University[G-YBFS]

Science & Technology - Other Topics ; Materials Science

Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary

WOS:000386540300018

AMER CHEMICAL SOC

20164502991569

Flexible electronics ; Indium compounds ; Mica ; Optoelectronic devices ; Perovskite ; Perovskite solar cells ; Silicate minerals ; Solar cells ; Tin oxides

Minerals:482.2 ; Solar Cells:702.3 ; Electronic Equipment, General Purpose and Industrial:715 ; Optical Devices and Systems:741.3 ; Inorganic Compounds:804.2

Web of Science

1.Shenzhen Univ, Coll Mat Sci & Engn, Shenzhen Key Lab Special Funct Mat, Shenzhen 518060, Peoples R China
2.Shenzhen Univ, Coll Chem & Environm Engn, Shenzhen 518060, Peoples R China
3.Northwestern Polytech Univ, State Key Lab Solidificat Proc, Xian 710072, Peoples R China
4.South China Univ Technol, Sch Mat Sci & Engn, Guangzhou 510640, Guangdong, Peoples R China
5.South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China
6.Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
7.Hong Kong Polytech Univ, Mat Res Ctr, Kowloon, Hong Kong, Peoples R China

Ke, Shanming,Chen, Chang,Fu, Nianqing,et al. Transparent Indium Tin Oxide Electrodes on Muscovite Mica for High-Temperature-Processed Flexible Optoelectronic Devices[J]. ACS Applied Materials & Interfaces,2016,8(42):28406-28411.

Ke, Shanming.,Chen, Chang.,Fu, Nianqing.,Zhou, Hua.,Ye, Mao.,...&Huang, Haitao.(2016).Transparent Indium Tin Oxide Electrodes on Muscovite Mica for High-Temperature-Processed Flexible Optoelectronic Devices.ACS Applied Materials & Interfaces,8(42),28406-28411.

Ke, Shanming,et al."Transparent Indium Tin Oxide Electrodes on Muscovite Mica for High-Temperature-Processed Flexible Optoelectronic Devices".ACS Applied Materials & Interfaces 8.42(2016):28406-28411.