题名 | Origin of low thermal conductivity in SnSe |
作者 | |
通讯作者 | Zhang, Yongsheng; Zhao, Li-Dong |
发表日期 | 2016-09-12
|
DOI | |
发表期刊 | |
ISSN | 2469-9950
|
EISSN | 2469-9969
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卷号 | 94期号:12 |
摘要 | We provide direct evidence to understand the origin of low thermal conductivity of SnSe using elastic measurements. Compared to state-of-the-art lead chalcogenides PbQ(Q = Te, Se, S), SnSe exhibits low values of sound velocity (similar to 1420 m/s), Young's modulus (E similar to 27.7 GPa), and shear modulus (G similar to 9.6 GPa), which are ascribed to the extremely weak Sn-Se atomic interactions (or bonds between layers); meanwhile, the deduced average Gr gamma uneisen parameter. of SnSe is as large as similar to 3.13, originating from the strong anharmonicity of the bonding arrangement. The calculated phonon mean free path (l similar to 0.84 nm) at 300 K is comparable to the lattice parameters of SnSe, indicating little room is left for further reduction of the thermal conductivity through introducing nanoscale microstructures and microscale grain boundaries. The low elastic properties indicate that the weak chemical bonding stiffness of SnSe generally causes phonon modes softening which eventually slows down phonon propagation. This work provides insightful data to understand the low lattice thermal conductivity of SnSe. |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
|
重要成果 | ESI高被引
|
学校署名 | 其他
|
资助项目 | Science, Technology and Innovation Commission of Shenzhen Municipality[ZDSYS20141118160434515]
; Science, Technology and Innovation Commission of Shenzhen Municipality[JCYJ20140612140151884]
|
WOS研究方向 | Materials Science
; Physics
|
WOS类目 | Materials Science, Multidisciplinary
; Physics, Applied
; Physics, Condensed Matter
|
WOS记录号 | WOS:000383145300006
|
出版者 | |
ESI学科分类 | PHYSICS
|
来源库 | Web of Science
|
引用统计 |
被引频次[WOS]:309
|
成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/29459 |
专题 | 理学院_物理系 |
作者单位 | 1.Beihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China 2.South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China 3.Shenzhen Key Lab Thermoelect Mat, Shenzhen 518055, Peoples R China 4.Chongqing Univ, Coll Phys, Chongqing 401331, Peoples R China 5.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China 6.Univ Sci & Technol China, Hefei 230026, Peoples R China |
推荐引用方式 GB/T 7714 |
Xiao, Yu,Chang, Cheng,Pei, Yanling,et al. Origin of low thermal conductivity in SnSe[J]. PHYSICAL REVIEW B,2016,94(12).
|
APA |
Xiao, Yu.,Chang, Cheng.,Pei, Yanling.,Wu, Di.,Peng, Kunling.,...&Zhao, Li-Dong.(2016).Origin of low thermal conductivity in SnSe.PHYSICAL REVIEW B,94(12).
|
MLA |
Xiao, Yu,et al."Origin of low thermal conductivity in SnSe".PHYSICAL REVIEW B 94.12(2016).
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条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | 操作 | |
PhysRevB.94.125203.p(1384KB) | -- | -- | 限制开放 | -- |
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