题名 | Quasi-One-Dimensional Metal-Insulator Transitions in Compound Semiconductor Surfaces |
作者 | |
通讯作者 | Xu, H.; Tong, S. Y. |
发表日期 | 2016-09-06
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DOI | |
发表期刊 | |
ISSN | 0031-9007
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EISSN | 1079-7114
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卷号 | 117期号:11 |
摘要 | Existing examples of Peierls-type 1D systems on surfaces involve depositing metallic overlayers on semiconducting substrates, in particular, at step edges. Here we propose a new class of Peierls system on the (10 (1) over bar0) surface of metal-anion wurtzite semiconductors. When the anions are bonded to hydrogen or lithium atoms, we obtain rows of threefold coordinated metal atoms that act as one-atom-wide metallic structures. First-principles calculations show that the surface is metallic, and below a certain critical temperature the surface will condense to a semiconducting state. The idea of surface scaffolding is introduced in which the rows are constrained to move along simple up-down and/or sideways displacements, mirroring the paradigm envisioned in Peierls's description. We predict that this type of insulating state should be visible in the partially hydrogenated (10 (1) over bar0) surface of many wurtzite compounds. |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
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重要成果 | NI论文
|
学校署名 | 第一
; 通讯
|
资助项目 | Deutsche Forschungsgemeinschaft (German Research Foundation)[ZA 780/3-1]
|
WOS研究方向 | Physics
|
WOS类目 | Physics, Multidisciplinary
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WOS记录号 | WOS:000383247000003
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出版者 | |
EI入藏号 | 20164002865410
|
EI主题词 | Atoms
; Calculations
; Lithium Alloys
; Metal Insulator Boundaries
; Metals
; Negative Ions
; Scaffolds
; Semiconductor Insulator Boundaries
; Zinc Sulfide
|
EI分类号 | Construction Equipment:405.1
; Lithium And Alloys:542.4
; Semiconductor Devices And Integrated Circuits:714.2
; Inorganic Compounds:804.2
; Mathematics:921
; Atomic And Molecular Physics:931.3
|
ESI学科分类 | PHYSICS
|
来源库 | Web of Science
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引用统计 |
被引频次[WOS]:6
|
成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/29463 |
专题 | 理学院_物理系 |
作者单位 | 1.South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China 2.Chinese Acad Sci, Dalian Inst Chem Phys, Dalian 116023, Peoples R China 3.RIKEN, Computat Condensed Matter Phys Lab, Wako, Saitama 3510198, Japan 4.Univ Liege, Dept Phys, B-4000 Liege, Belgium 5.Univ Liege, European Theoret Spect Facil, B-4000 Liege, Belgium 6.Forschungszentrum Julich, PGI 1, D-52425 Julich, Germany 7.Forschungszentrum Julich, IAS 1, D-52425 Julich, Germany 8.Rhein Westfal TH Aachen, Inst Theoret Solid State Phys, D-52056 Aachen, Germany 9.Rhein Westfal TH Aachen, ETSF, D-52056 Aachen, Germany 10.South China Univ Technol, Dept Phys, Guangzhou 510640, Guangdong, Peoples R China 11.Chinese Univ Hong Kong, Sch Sci & Engn, Shenzhen 518172, Peoples R China |
第一作者单位 | 物理系 |
通讯作者单位 | 物理系 |
第一作者的第一单位 | 物理系 |
推荐引用方式 GB/T 7714 |
Zhao, J. Z.,Fan, W.,Verstraete, M. J.,et al. Quasi-One-Dimensional Metal-Insulator Transitions in Compound Semiconductor Surfaces[J]. PHYSICAL REVIEW LETTERS,2016,117(11).
|
APA |
Zhao, J. Z..,Fan, W..,Verstraete, M. J..,Zanolli, Z..,Fan, J..,...&Tong, S. Y..(2016).Quasi-One-Dimensional Metal-Insulator Transitions in Compound Semiconductor Surfaces.PHYSICAL REVIEW LETTERS,117(11).
|
MLA |
Zhao, J. Z.,et al."Quasi-One-Dimensional Metal-Insulator Transitions in Compound Semiconductor Surfaces".PHYSICAL REVIEW LETTERS 117.11(2016).
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条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | 操作 | |
Zhao-2016-Quasi-One-(1253KB) | -- | -- | 限制开放 | -- |
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