中文版 | English
题名

Quasi-One-Dimensional Metal-Insulator Transitions in Compound Semiconductor Surfaces

作者
通讯作者Xu, H.; Tong, S. Y.
发表日期
2016-09-06
DOI
发表期刊
ISSN
0031-9007
EISSN
1079-7114
卷号117期号:11
摘要

Existing examples of Peierls-type 1D systems on surfaces involve depositing metallic overlayers on semiconducting substrates, in particular, at step edges. Here we propose a new class of Peierls system on the (10 (1) over bar0) surface of metal-anion wurtzite semiconductors. When the anions are bonded to hydrogen or lithium atoms, we obtain rows of threefold coordinated metal atoms that act as one-atom-wide metallic structures. First-principles calculations show that the surface is metallic, and below a certain critical temperature the surface will condense to a semiconducting state. The idea of surface scaffolding is introduced in which the rows are constrained to move along simple up-down and/or sideways displacements, mirroring the paradigm envisioned in Peierls's description. We predict that this type of insulating state should be visible in the partially hydrogenated (10 (1) over bar0) surface of many wurtzite compounds.

相关链接[来源记录]
收录类别
SCI ; EI
语种
英语
重要成果
NI论文
学校署名
第一 ; 通讯
资助项目
Deutsche Forschungsgemeinschaft (German Research Foundation)[ZA 780/3-1]
WOS研究方向
Physics
WOS类目
Physics, Multidisciplinary
WOS记录号
WOS:000383247000003
出版者
EI入藏号
20164002865410
EI主题词
Atoms ; Calculations ; Lithium Alloys ; Metal Insulator Boundaries ; Metals ; Negative Ions ; Scaffolds ; Semiconductor Insulator Boundaries ; Zinc Sulfide
EI分类号
Construction Equipment:405.1 ; Lithium And Alloys:542.4 ; Semiconductor Devices And Integrated Circuits:714.2 ; Inorganic Compounds:804.2 ; Mathematics:921 ; Atomic And Molecular Physics:931.3
ESI学科分类
PHYSICS
来源库
Web of Science
引用统计
被引频次[WOS]:6
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/29463
专题理学院_物理系
作者单位
1.South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China
2.Chinese Acad Sci, Dalian Inst Chem Phys, Dalian 116023, Peoples R China
3.RIKEN, Computat Condensed Matter Phys Lab, Wako, Saitama 3510198, Japan
4.Univ Liege, Dept Phys, B-4000 Liege, Belgium
5.Univ Liege, European Theoret Spect Facil, B-4000 Liege, Belgium
6.Forschungszentrum Julich, PGI 1, D-52425 Julich, Germany
7.Forschungszentrum Julich, IAS 1, D-52425 Julich, Germany
8.Rhein Westfal TH Aachen, Inst Theoret Solid State Phys, D-52056 Aachen, Germany
9.Rhein Westfal TH Aachen, ETSF, D-52056 Aachen, Germany
10.South China Univ Technol, Dept Phys, Guangzhou 510640, Guangdong, Peoples R China
11.Chinese Univ Hong Kong, Sch Sci & Engn, Shenzhen 518172, Peoples R China
第一作者单位物理系
通讯作者单位物理系
第一作者的第一单位物理系
推荐引用方式
GB/T 7714
Zhao, J. Z.,Fan, W.,Verstraete, M. J.,et al. Quasi-One-Dimensional Metal-Insulator Transitions in Compound Semiconductor Surfaces[J]. PHYSICAL REVIEW LETTERS,2016,117(11).
APA
Zhao, J. Z..,Fan, W..,Verstraete, M. J..,Zanolli, Z..,Fan, J..,...&Tong, S. Y..(2016).Quasi-One-Dimensional Metal-Insulator Transitions in Compound Semiconductor Surfaces.PHYSICAL REVIEW LETTERS,117(11).
MLA
Zhao, J. Z.,et al."Quasi-One-Dimensional Metal-Insulator Transitions in Compound Semiconductor Surfaces".PHYSICAL REVIEW LETTERS 117.11(2016).
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