Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides

Xu, Shuigang1,2; Wu, Zefei1,2; Lu, Huanhuan1,2; Han, Yu1,2; Long, Gen1,2; Chen, Xiaolong1,2; Han, Tianyi1,2; Ye, Weiguang1,2; Wu, Yingying1,2; Lin, Jiangxiazi1,2; Shen, Junying1,2; Cai, Yuan1,2; He, Yuheng1,2; Zhang, Fan3; Lortz, Rolf1,2; Cheng, Chun4,5; Wang, Ning1,2

2016-06

10.1088/2053-1583/3/2/021007

2D Materials   影响因子和分区

2053-1583

Low carrier mobility and high electrical contact resistance are two major obstacles prohibiting explorations of quantum transport in TMDCs. Here, we demonstrate an effective method to establish low-temperature Ohmic contacts in boron nitride encapsulated TMDC devices based on selective etching and conventional electron-beam evaporation of metal electrodes. This method works for most extensively studied TMDCs in recent years, including MoS2, MoSe2, WSe2, WS2, and 2H-MoTe2. Low electrical contact resistance is achieved at 2 K. All of the few-layerTMDCdevices studied show excellent performance with remarkably improved field-effect mobilities ranging from 2300 to 16 000 cm 2 V-1 s(-1), as verified by the high carrier mobilities extracted from Hall effect measurements. Moreover, both high-mobility n-type and p-typeTMDCchannels can be realized by simply using appropriate contact metals. Prominent Shubnikov-de Haas oscillations have been observed and investigated in these high-quality TMDC devices.

transition metal dichalcogenides h-BN encapsulation field-effect transistor contact resistance quantum oscillations

SCI ; EI

英语

其他

Research Grants Council of Hong Kong[16302215] ; Research Grants Council of Hong Kong[HKU9/CRF/13G] ; Research Grants Council of Hong Kong[604112] ; Research Grants Council of Hong Kong[N_HKUST613/12]

Materials Science

Materials Science, Multidisciplinary

WOS:000378571400007

IOP PUBLISHING LTD

20182205259648

Carrier mobility ; Contact resistance ; Current voltage characteristics ; Electric contactors ; Electric field effects ; Field effect transistors ; III-V semiconductors ; Layered semiconductors ; Molybdenum compounds ; Ohmic contacts ; Quantum electronics ; Temperature ; Transition metals ; Tungsten compounds

Metallurgy and Metallography:531 ; Thermodynamics:641.1 ; Electricity: Basic Concepts and Phenomena:701.1 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Physical Chemistry:801.4 ; Quantum Theory; Quantum Mechanics:931.4

Web of Science

1.Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China
2.Hong Kong Univ Sci & Technol, Ctr Quantum Mat 1D 2D, Hong Kong, Hong Kong, Peoples R China
3.Univ Texas Dallas, Dept Phys, Richardson, TX 75080 USA
4.South Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen 518055, Peoples R China
5.South Univ Sci & Technol, Shenzhen Key Lab Nanoimprint Technol, Shenzhen 518055, Peoples R China

Xu, Shuigang,Wu, Zefei,Lu, Huanhuan,et al. Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides[J]. 2D Materials,2016,3(2).

Xu, Shuigang.,Wu, Zefei.,Lu, Huanhuan.,Han, Yu.,Long, Gen.,...&Wang, Ning.(2016).Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides.2D Materials,3(2).

Xu, Shuigang,et al."Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides".2D Materials 3.2(2016).