Improved quantum dot light-emitting diodes with a cathode interfacial layer

Ding, Tao1; Yang, Xuyong1; Ke, Lin3; Liu, Yanjun3; Tan, Wan-Yi4; Wang, Ning1; Zhu, Xu-Hui4; Sun, Xiao Wei1,2

2016-05

10.1016/j.orgel.2016.02.018

ORGANIC ELECTRONICS   影响因子和分区

1566-1199

1878-5530

Colloidal quantum dot light-emitting diodes (QLEDs) are reported with improved external quantum efficiencies (EQE) and efficiency roll-off under high current densities by introducing a thermally-evaporated organic cathode interfacial material (CIM) Phen-NaDPO. QLEDs with this new CIM modified Al cathode were fabricated, giving an upwards of 25% enhancement in the EQE relative to the bare Al device. Ultraviolet photoemission spectroscopy (UPS) suggests that this material can effectively lower the work function of Al, therefore facilitating the electron injection in QLEDs. Furthermore, Phen-NaDPO was introduced into the LiF/Al device to afford better balanced hole/electron injection in the emitting layer. Consequently, the QLEDs with the organic CIM/LiF/Al cathode further increased EQE and current efficiency by 44% and 52%, respectively, with higher luminance and lower efficiency roll-off under high current densities. (C) 2016 Elsevier B.V. All rights reserved.

Quantum dot Light-emitting diodes Cathode interfacial material Electron/hole-only devices Charge balance

SCI ; EI

英语

通讯

Guangdong province[2015CB655000] ; Guangdong province[201101C0105067115] ; Guangdong province[51173051] ; Guangdong province[U1301243]

Materials Science ; Physics

Materials Science, Multidisciplinary ; Physics, Applied

WOS:000373092500015

ELSEVIER SCIENCE BV

20160902029964

Aluminum ; Cathodes ; Diodes ; Efficiency ; Electron emission ; Light emitting diodes ; Lithium compounds ; Nanocrystals ; Photoelectron spectroscopy ; Quantum efficiency ; Semiconductor quantum dots

Aluminum:541.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Nanotechnology:761 ; Production Engineering:913.1 ; Quantum Theory; Quantum Mechanics:931.4

PHYSICS

Web of Science

1.Nanyang Technol Univ, Sch Elect & Elect Engn, LUMINOUS Ctr Excellence Semicond Lighting & Displ, 50 Nanyang Ave, Singapore 639798, Singapore
2.South Univ Sci & Technol China, Dept Elect & Elect Engn, Coll Engn, 1088 Xueyuan Rd, Shenzhen 518055, Peoples R China
3.ASTAR, Inst Mat Res & Engn, 3 Res Link, Singapore 117602, Singapore
4.S China Univ Technol, Inst Polymer Optoelect Mat & Devices, SKLLMD, Guangzhou 510640, Guangdong, Peoples R China

Ding, Tao,Yang, Xuyong,Ke, Lin,et al. Improved quantum dot light-emitting diodes with a cathode interfacial layer[J]. ORGANIC ELECTRONICS,2016,32:89-93.

Ding, Tao.,Yang, Xuyong.,Ke, Lin.,Liu, Yanjun.,Tan, Wan-Yi.,...&Sun, Xiao Wei.(2016).Improved quantum dot light-emitting diodes with a cathode interfacial layer.ORGANIC ELECTRONICS,32,89-93.

Ding, Tao,et al."Improved quantum dot light-emitting diodes with a cathode interfacial layer".ORGANIC ELECTRONICS 32(2016):89-93.