Oxygen Vacancy Induced Room-Temperature Metal-Insulator Transition in Nickelate Films and Its Potential Application in Photovoltaics

Wang, Le1; Dash, Sibashisa1; Chang, Lei1; You, Lu1; Peng, Yaqing2; He, Xu2; Jin, Kui-juan2,3; Zhou, Yang1; Ong, Hock Guan4; Ren, Peng1; Wang, Shiwei1; Chen, Lang5; Wang, Junling1

2016-04-20

10.1021/acsami.6b00650

ACS Applied Materials & Interfaces   影响因子和分区

1944-8244

1944-8252

Oxygen vacancy is intrinsically coupled with magnetic, electronic, and transport properties of transition-metal oxide materials and directly determines their multifunctionality. Here, we demonstrate reversible control of oxygen content by postannealing at temperature lower than 300 degrees C and realize the reversible metal insulator transition in epitaxial NdNiO3 films. Importantly, over 6 orders of magnitude in the resistance modulation and a large change in optical bandgap are demonstrated at room temperature without destroying the parent framework and changing the p-type conductive mechanism. Further study revealed that oxygen vacancies stabilized the insulating phase at room temperature is universal for perovskite nickelate films. Acting as electron donors, oxygen vacancies not only stabilize the insulating phase at room temperature, but also induce a large magnetization of similar to 50 emu/cm(3) due to the formation of strongly correlated Ni2+ t(2g)(6)e(g)(2) states. The bandgap opening is an order of magnitude larger than that of the thermally driven metal insulator transition and continuously tunable. Potential application of the newly found insulating phase in photovoltaics has been demonstrated in the nickelate-based heterojunctions. Our discovery opens up new possibilities for strongly correlated perovskite nickelates.

nickelate thin films oxygen vacancy metal-insulator transition heterojunction photovoltaics

SCI ; EI

英语

其他

Ministry of Education, Singapore[MOE2013-T2-1-052]

Science & Technology - Other Topics ; Materials Science

Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary

WOS:000374812000026

AMER CHEMICAL SOC

20161902348135

Energy gap ; Heterojunctions ; Insulation ; Metal insulator boundaries ; Metal insulator transition ; Neodymium compounds ; Nickel compounds ; Perovskite ; Semiconductor insulator boundaries ; Thin films ; Transition metal oxides ; Transition metals ; Vacancies

Insulating Materials:413 ; Minerals:482.2 ; Metallurgy and Metallography:531 ; Semiconductor Devices and Integrated Circuits:714.2 ; Crystalline Solids:933.1

Web of Science

1.Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore
2.Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
3.Collaborat Innovat Ctr Quantum Matter, Beijing 100190, Peoples R China
4.Nanyang Technol Univ, Temasek Labs NTU, Singapore 637553, Singapore
5.South Univ Sci & Technol China, Dept Phys, Shen Zhen 518055, Peoples R China

Wang, Le,Dash, Sibashisa,Chang, Lei,et al. Oxygen Vacancy Induced Room-Temperature Metal-Insulator Transition in Nickelate Films and Its Potential Application in Photovoltaics[J]. ACS Applied Materials & Interfaces,2016,8(15):9769-9776.

Wang, Le.,Dash, Sibashisa.,Chang, Lei.,You, Lu.,Peng, Yaqing.,...&Wang, Junling.(2016).Oxygen Vacancy Induced Room-Temperature Metal-Insulator Transition in Nickelate Films and Its Potential Application in Photovoltaics.ACS Applied Materials & Interfaces,8(15),9769-9776.

Wang, Le,et al."Oxygen Vacancy Induced Room-Temperature Metal-Insulator Transition in Nickelate Films and Its Potential Application in Photovoltaics".ACS Applied Materials & Interfaces 8.15(2016):9769-9776.