On the hole accelerator for III-nitride light-emitting diodes

Zhang, Zi-Hui1; Zhang, Yonghui1; Bi, Wengang1; Geng, Chong1; Xu, Shu1; Demir, Hilmi Volkan2,3,4; Sun, Xiao Wei2,5

2016-04-11

10.1063/1.4947025

APPLIED PHYSICS LETTERS   影响因子和分区

0003-6951

1077-3118

In this work, we systematically conduct parametric studies revealing the sensitivity of the hole injection on the hole accelerator (a hole accelerator is made of the polarization mismatched p-electron blocking layer (EBL)/p-GaN/p-AlxGa1-xN heterojunction) with different designs, including the AlN composition in the p-AlxGa1-xN layer, and the thickness for the p-GaN layer and the p-AlxGa1-xN layer. According to our findings, the energy that the holes obtain does not monotonically increase as the AlN incorporation in the p-AlxGa1-xN layer increases. Meanwhile, with p-GaN layer or p-AlxGa1-xN layer thickening, the energy that the holes gain increases and then reaches a saturation level. Thus, the hole injection efficiency and the device efficiency are very sensitive to the p-EBL/p-GaN/p-AlxGa1-xN design, and the hole accelerator can effectively increase the hole injection if properly designed. Published by AIP Publishing.

SCI ; EI

英语

NI期刊

通讯

Natural Science Foundation of China[51502074]

Physics

Physics, Applied

WOS:000374314000005

AMER INST PHYSICS

20161802331060

Aluminum nitride ; Electron injection ; Gallium nitride ; Heterojunctions ; III-V semiconductors ; Light emitting diodes

Semiconductor Devices and Integrated Circuits:714.2 ; Organic Compounds:804.1

PHYSICS

Web of Science

1.Hebei Univ Technol, Sch Elect & Informat Engn, Key Lab Elect Mat & Devices Tianjin, 5340 Xiping Rd, Tianjin 300401, Peoples R China
2.Nanyang Technol Univ, LUMINOUS Ctr Excellence Semicond Lighting & Displ, Sch Elect & Elect Engn, 50 Nanyang Ave, Singapore 639798, Singapore
3.Bilkent Univ, Dept Phys, Dept Elect & Elect, TR-06800 Ankara, Turkey
4.Bilkent Univ, UNAM, Inst Mat Sci & Nanotechnol, TR-06800 Ankara, Turkey
5.Southern Univ Sci & Technol, Coll Engn, Dept Elect & Elect Engn, 1088 Xue Yuan Rd, Shenzhen 518055, Guangdong, Peoples R China

Zhang, Zi-Hui,Zhang, Yonghui,Bi, Wengang,et al. On the hole accelerator for III-nitride light-emitting diodes[J]. APPLIED PHYSICS LETTERS,2016,108(15).

Zhang, Zi-Hui.,Zhang, Yonghui.,Bi, Wengang.,Geng, Chong.,Xu, Shu.,...&Sun, Xiao Wei.(2016).On the hole accelerator for III-nitride light-emitting diodes.APPLIED PHYSICS LETTERS,108(15).

Zhang, Zi-Hui,et al."On the hole accelerator for III-nitride light-emitting diodes".APPLIED PHYSICS LETTERS 108.15(2016).