中文版 | English
题名

Compact GaN-based optical inclinometer

作者
通讯作者Chu, Zhiqin; Li, Kwai Hei
发表日期
2022-03-01
DOI
发表期刊
ISSN
0146-9592
EISSN
1539-4794
卷号47期号:5页码:1238-1241
摘要

In this Letter, a compact optical inclinometer in subcentimeter size is proposed and demonstrated. A 1x1 mm(2) GaN-on-sapphire chip composed of a light-emitting diode and photodetector is fabricated through wafer-scale processes and integrated with a spherical glass cavity with a diameter of 5 mm, which contains ethanol as a liquid pendulum. When applying inclinations relative to the horizon, the extent to which the chip is immersed in ethanol changes, thereby altering the amount of light received by the on-chip detector. The underlying mechanisms of angle-dependent reflectance characteristics at the sapphire boundary are identified, and the measured photocurrent signal can be used as quantitative readouts for determining the angle of inclination from -60 to +60 degrees. A linear response with a sensitivity of 19.4 nAP and an estimated resolution of 0.003 degrees is obtained over a wide linear range from -40 to +40 degrees. Verified by a series of dynamic experiments, the developed inclinometer exhibits a high degree of repeatability and stability, which paves the way for its widespread usage and applications. (C) 2022 Optica Publishing Group

相关链接[来源记录]
收录类别
SCI ; EI
语种
英语
学校署名
第一 ; 通讯
资助项目
National Natural Science Foundation of China[12074170,62004088] ; HKSAR Research Grants Council (RGC) Early Career Scheme[27202919] ; Shenzhen Natural Science Foundation Stability Support Program Project[20200925160044004] ; NSQKJJ[K21799120]
WOS研究方向
Optics
WOS类目
Optics
WOS记录号
WOS:000762499000058
出版者
EI入藏号
20221011749553
EI主题词
Gallium Nitride ; III-V Semiconductors ; Sapphire
EI分类号
Gems:482.2.1 ; Semiconducting Materials:712.1 ; Organic Compounds:804.1
ESI学科分类
PHYSICS
来源库
Web of Science
引用统计
被引频次[WOS]:1
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/296887
专题工学院_深港微电子学院
作者单位
1.Southern Univ Sci & Technol, Sch Microelect, Shenzhen 518055, Peoples R China
2.Univ Hong Kong, Dept Elect & Elect Engn, Pokfulam Rd, Hong Kong, Peoples R China
3.Peking Univ, Dongguan Inst Optoelect, Dongguan 523808, Peoples R China
4.Univ Hong Kong, Dept Elect & Elect Engn, Sch Biomed Sci, Pokfulam Rd, Hong Kong, Peoples R China
5.Southern Univ Sci & Technol, Minist Educ, Engn Res Ctr Integrated Circuits Next Generat Com, Shenzhen 518055, Peoples R China
6.Southern Univ Sci & Technol, Engn Res Ctr Three Dimens Integrat Guangdong Prov, Shenzhen 518055, Peoples R China
第一作者单位深港微电子学院
通讯作者单位深港微电子学院;  南方科技大学
第一作者的第一单位深港微电子学院
推荐引用方式
GB/T 7714
An, Xiaoshuai,Yang, Hongying,Luo, Yumeng,et al. Compact GaN-based optical inclinometer[J]. OPTICS LETTERS,2022,47(5):1238-1241.
APA
An, Xiaoshuai,Yang, Hongying,Luo, Yumeng,Wang, Qi,Chu, Zhiqin,&Li, Kwai Hei.(2022).Compact GaN-based optical inclinometer.OPTICS LETTERS,47(5),1238-1241.
MLA
An, Xiaoshuai,et al."Compact GaN-based optical inclinometer".OPTICS LETTERS 47.5(2022):1238-1241.
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