Parameters study on the growth of GaAs nanowires on indium tin oxide by metal-organic chemical vapor deposition

Wu, Dan1; Tang, Xiaohong1; Wang, Kai2; Olivier, Aurelien3; Li, Xianqiang1

2016-03-07

10.1063/1.4942864

JOURNAL OF APPLIED PHYSICS   影响因子和分区

0021-8979

1089-7550

After successful demonstration of GaAs nanowire (NW) epitaxial growth on indium tin oxide (ITO) by metal organic chemical vapor deposition, we systematically investigate the effect of growth parameters' effect on the GaAs NW, including temperature, precursor molar flow rates, growth time, and Au catalyst size. 40 nm induced GaAs NWs are observed with zinc-blende structure. Based on vapor-liquid-solid mechanism, a kinetic model is used to deepen our understanding of the incorporation of growth species and the role of various growth parameters in tuning the GaAs NW growth rate. Thermally activated behavior has been investigated by variation of growth temperature. Activation energies of 40 nm Au catalyst induced NWs are calculated at different tri-methylgallium (TMGa) molar flow rates about 65 kJ/mol. The GaAs NWs growth rates increase with TMGa molar flow rates whereas the growth rates are almost independent of growth time. Due to Gibbs-Thomson effect, the GaAs NW growth rates increase with Au nanoparticle size at different temperatures. Critical radius is calculated as 2.14 nm at the growth condition of 430 degrees C and 1.36 mu mol/s TMGa flow rate. It is also proved experimentally that Au nanoparticle below the critical radius such as 2 nm cannot initiate the growth of NWs on ITO. This theoretical and experimental growth parameters investigation enables great controllability over GaAs NWs grown on transparent conductive substrate where the methodology can be expanded to other III-V material NWs and is critical for potential hybrid solar cell application. (C) 2016 AIP Publishing LLC.

SCI ; EI

英语

通讯

Physics

Physics, Applied

WOS:000372351900032

AMER INST PHYSICS

20161102108607

Activation energy ; Catalysts ; Flow rate ; Gallium arsenide ; Gold nanoparticles ; Growth rate ; III-V semiconductors ; Indium compounds ; Industrial chemicals ; Metallorganic chemical vapor deposition ; Nanoparticles ; Nanowires ; Organic chemicals ; Organometallics ; Semiconducting gallium ; Solar cells ; Thermoelectricity ; Tin oxides ; Zinc sulfide

Precious Metals:547.1 ; Fluid Flow:631 ; Electricity: Basic Concepts and Phenomena:701.1 ; Solar Cells:702.3 ; Single Element Semiconducting Materials:712.1.1 ; Nanotechnology:761 ; Chemical Reactions:802.2 ; Chemical Products Generally:804 ; Solid State Physics:933

PHYSICS

Web of Science

1.Nanyang Technol Univ, Sch Elect & Elect Engn, Photon Ctr Excellence, OPTIMUS, 50 Nanyang Ave, Singapore 639798, Singapore
2.South Univ Sci & Technol China, Dept Elect & Elect Engn, 1088 Xueyuan Ave, Shenzhen 518055, Peoples R China
3.Nanyang Technol Univ, Sch Elect & Elect Engn, CINTRA UMI 3288, Res Techno Plaza,50 Nanyang Dr,Border 10 Block, Singapore 637553, Singapore

Wu, Dan,Tang, Xiaohong,Wang, Kai,et al. Parameters study on the growth of GaAs nanowires on indium tin oxide by metal-organic chemical vapor deposition[J]. JOURNAL OF APPLIED PHYSICS,2016,119(9).

Wu, Dan,Tang, Xiaohong,Wang, Kai,Olivier, Aurelien,&Li, Xianqiang.(2016).Parameters study on the growth of GaAs nanowires on indium tin oxide by metal-organic chemical vapor deposition.JOURNAL OF APPLIED PHYSICS,119(9).

Wu, Dan,et al."Parameters study on the growth of GaAs nanowires on indium tin oxide by metal-organic chemical vapor deposition".JOURNAL OF APPLIED PHYSICS 119.9(2016).