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题名

Inverted Quantum-Dot Light-Emitting Diodes Fabricated by All-Solution Processing

作者
通讯作者Chen, Shuming
发表日期
2016-03-02
DOI
发表期刊
ISSN
1944-8244
EISSN
1944-8252
卷号8期号:8页码:5493-5498
摘要
All-solution processed, multilayer, and inverted quantum-dot light-emitting diodes (QD-LEDs) are developed in this work. To protect the QDs from dissolving by the solvents of upper layers, the solvents of poly(9-vinlycarbazole) (PVK) hole transporting layer are first investigated. The QD layer has been less affected by o-dichlorobenzene solvent than other typical solvents like, chloroform and chlorobenzene. Second, to deposit a hydrophilic poly(ethylenedioxythiophene)/polystyrenesulfonate (PEDOT:PSS) hole injection layer on top of hydrophobic PVK, the surface energy of the PEDOT:PSS is reduced by using isopropanol as the additive. With optimized conditions, the demonstrated QD-LEDs exhibit a maximum luminance of 16290 cd/m(2) and a peak current efficiency of 4.1 cd/A, which is the highest among the reported values. These results may offer a practicable platform for further research, leading to the achievement of all-solution processed, multilayer, and efficient inverted QD-LEDs.
关键词
相关链接[来源记录]
收录类别
SCI ; EI
语种
英语
学校署名
第一 ; 通讯
资助项目
Special Support Program for Young Talent Scholar of Guangdong Province[2014TQ01 x 015]
WOS研究方向
Science & Technology - Other Topics ; Materials Science
WOS类目
Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号
WOS:000371453600052
出版者
EI入藏号
20161002078410
EI主题词
Charge injection ; Chlorine compounds ; Conducting polymers ; Diodes ; Light emitting diodes ; Multilayers ; Nanocrystals ; Organic solvents ; Semiconductor quantum dots
EI分类号
Conducting Materials:708.2 ; Semiconductor Devices and Integrated Circuits:714.2 ; Nanotechnology:761 ; Chemical Agents and Basic Industrial Chemicals:803
来源库
Web of Science
引用统计
被引频次[WOS]:80
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/29709
专题工学院_电子与电气工程系
作者单位
Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China
第一作者单位电子与电气工程系
通讯作者单位电子与电气工程系
第一作者的第一单位电子与电气工程系
推荐引用方式
GB/T 7714
Zhang, Heng,Li, Hanrun,Sun, Xiaowei,et al. Inverted Quantum-Dot Light-Emitting Diodes Fabricated by All-Solution Processing[J]. ACS Applied Materials & Interfaces,2016,8(8):5493-5498.
APA
Zhang, Heng,Li, Hanrun,Sun, Xiaowei,&Chen, Shuming.(2016).Inverted Quantum-Dot Light-Emitting Diodes Fabricated by All-Solution Processing.ACS Applied Materials & Interfaces,8(8),5493-5498.
MLA
Zhang, Heng,et al."Inverted Quantum-Dot Light-Emitting Diodes Fabricated by All-Solution Processing".ACS Applied Materials & Interfaces 8.8(2016):5493-5498.
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