题名 | Inverted Quantum-Dot Light-Emitting Diodes Fabricated by All-Solution Processing |
作者 | |
通讯作者 | Chen, Shuming |
发表日期 | 2016-03-02
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DOI | |
发表期刊 | |
ISSN | 1944-8244
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EISSN | 1944-8252
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卷号 | 8期号:8页码:5493-5498 |
摘要 | All-solution processed, multilayer, and inverted quantum-dot light-emitting diodes (QD-LEDs) are developed in this work. To protect the QDs from dissolving by the solvents of upper layers, the solvents of poly(9-vinlycarbazole) (PVK) hole transporting layer are first investigated. The QD layer has been less affected by o-dichlorobenzene solvent than other typical solvents like, chloroform and chlorobenzene. Second, to deposit a hydrophilic poly(ethylenedioxythiophene)/polystyrenesulfonate (PEDOT:PSS) hole injection layer on top of hydrophobic PVK, the surface energy of the PEDOT:PSS is reduced by using isopropanol as the additive. With optimized conditions, the demonstrated QD-LEDs exhibit a maximum luminance of 16290 cd/m(2) and a peak current efficiency of 4.1 cd/A, which is the highest among the reported values. These results may offer a practicable platform for further research, leading to the achievement of all-solution processed, multilayer, and efficient inverted QD-LEDs. |
关键词 | |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
|
学校署名 | 第一
; 通讯
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资助项目 | Special Support Program for Young Talent Scholar of Guangdong Province[2014TQ01 x 015]
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WOS研究方向 | Science & Technology - Other Topics
; Materials Science
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WOS类目 | Nanoscience & Nanotechnology
; Materials Science, Multidisciplinary
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WOS记录号 | WOS:000371453600052
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出版者 | |
EI入藏号 | 20161002078410
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EI主题词 | Charge injection
; Chlorine compounds
; Conducting polymers
; Diodes
; Light emitting diodes
; Multilayers
; Nanocrystals
; Organic solvents
; Semiconductor quantum dots
|
EI分类号 | Conducting Materials:708.2
; Semiconductor Devices and Integrated Circuits:714.2
; Nanotechnology:761
; Chemical Agents and Basic Industrial Chemicals:803
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来源库 | Web of Science
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引用统计 |
被引频次[WOS]:80
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成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/29709 |
专题 | 工学院_电子与电气工程系 |
作者单位 | Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China |
第一作者单位 | 电子与电气工程系 |
通讯作者单位 | 电子与电气工程系 |
第一作者的第一单位 | 电子与电气工程系 |
推荐引用方式 GB/T 7714 |
Zhang, Heng,Li, Hanrun,Sun, Xiaowei,et al. Inverted Quantum-Dot Light-Emitting Diodes Fabricated by All-Solution Processing[J]. ACS Applied Materials & Interfaces,2016,8(8):5493-5498.
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APA |
Zhang, Heng,Li, Hanrun,Sun, Xiaowei,&Chen, Shuming.(2016).Inverted Quantum-Dot Light-Emitting Diodes Fabricated by All-Solution Processing.ACS Applied Materials & Interfaces,8(8),5493-5498.
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MLA |
Zhang, Heng,et al."Inverted Quantum-Dot Light-Emitting Diodes Fabricated by All-Solution Processing".ACS Applied Materials & Interfaces 8.8(2016):5493-5498.
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条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | 操作 | |
Zhang-2016-Inverted (1716KB) | -- | -- | 限制开放 | -- |
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