Ultraviolet Electroluminescence from ZnS@ZnO Core-Shell Nanowires/p-GaN Introduced by Exciton Localization

Fang, Xuan1; Wei, Zhipeng1; Yang, Yahui2; Chen, Rui2; Li, Yongfeng3; Tang, Jilong1; Fang, Dan1; Jia, Huimin1; Wang, Dengkui1; Fan, Jie1; Ma, Xiaohui1; Yao, Bin3; Wang, Xiaohua1

2016-01-27

10.1021/acsami.5b08961

ACS Applied Materials & Interfaces   影响因子和分区

1944-8244

1944-8252

We investigate the electroluminescence (EL) from light emitting diodes (LEDs) of ZnO nanowires/p-GaN structure and ZnS@ZnO core-shell nanowires/p-GaN structure. With the increase of forward bias, the emission peak of ZnO nanowires/p-GaN structure heterojunction shows a blue-shift, while the ZnS@ZnO core shell nanowires/p-GaN structure demonstrates a changing EL emission; the ultraviolet (UV) emission at 378 nm can be observed. This discrepancy is related to the localised states introduced by ZnS particles, which results in a different carrier recombination process near the interfaces of the heterojunction. The localized states capture the carriers in ZnO nanowires and convert them to localived excitons under high forward bias. A strong UV emission due to localized excitons can be observed. Our results indicated that utilizing localized excitons should be a new route toward ZnO-based ultraviolet LEDs with high efficiency.

ZnO core-shell nanowires localized excitons electroluminescence gan heterojunction

SCI ; EI

英语

通讯

fundamental research grant at SUSTC[FRG-SUSTC1501A-43]

Science & Technology - Other Topics ; Materials Science

Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary

WOS:000369044100016

AMER CHEMICAL SOC

20160501881236

Excitons ; Gallium compounds ; Heterojunctions ; II-VI semiconductors ; Interface states ; Light emitting diodes ; Nanowires ; Shells (structures) ; Zinc oxide ; Zinc sulfide

Structural Members and Shapes:408.2 ; Semiconductor Devices and Integrated Circuits:714.2 ; Light, Optics and Optical Devices:741 ; Nanotechnology:761 ; Inorganic Compounds:804.2 ; Classical Physics; Quantum Theory; Relativity:931 ; High Energy Physics; Nuclear Physics; Plasma Physics:932 ; Solid State Physics:933

Web of Science

1.Changchun Univ Sci & Technol, Sch Sci, State Key Lab High Power Semicond Lasers, 7089 Wei Xing Rd, Changchun 130022, Peoples R China
2.South Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Guangdong, Peoples R China
3.Jilin Univ, Coll Phys, Minist Educ, Key Lab Phys & Technol Adv Batteries, Changchun 130012, Peoples R China

Fang, Xuan,Wei, Zhipeng,Yang, Yahui,et al. Ultraviolet Electroluminescence from ZnS@ZnO Core-Shell Nanowires/p-GaN Introduced by Exciton Localization[J]. ACS Applied Materials & Interfaces,2016,8(3):1661-1666.

Fang, Xuan.,Wei, Zhipeng.,Yang, Yahui.,Chen, Rui.,Li, Yongfeng.,...&Wang, Xiaohua.(2016).Ultraviolet Electroluminescence from ZnS@ZnO Core-Shell Nanowires/p-GaN Introduced by Exciton Localization.ACS Applied Materials & Interfaces,8(3),1661-1666.

Fang, Xuan,et al."Ultraviolet Electroluminescence from ZnS@ZnO Core-Shell Nanowires/p-GaN Introduced by Exciton Localization".ACS Applied Materials & Interfaces 8.3(2016):1661-1666.