A fast transfer-free synthesis of high-quality monolayer graphene on insulating substrates by a simple rapid thermal treatment

Wu, Zefei1; Guo, Yanqing2; Guo, Yuzheng3; Huang, Rui2,3; Xu, Shuigang1; Song, Jie2; Lu, Huanhuan1; Lin, Zhenxu2; Han, Yu1; Li, Hongliang2; Han, Tianyi1; Lin, Jiangxiazi1; Wu, Yingying1; Long, Gen1; Cai, Yuan1; Cheng, Chun4; Su, Dangsheng5; Robertson, John3; Wang, Ning1

2016

10.1039/c5nr05393e

Nanoscale   影响因子和分区

2040-3364

2040-3372

The transfer-free synthesis of high-quality, large-area graphene on a given dielectric substrate, which is highly desirable for device applications, remains a significant challenge. In this paper, we report on a simple rapid thermal treatment (RTT) method for the fast and direct growth of high-quality, large-scale monolayer graphene on a SiO2/Si substrate from solid carbon sources. The stack structure of a solid carbon layer/copperfilm/SiO2 is adopted in the RTT process. The inserted copper film does not only act as an active catalyst for the carbon precursor but also serves as a "filter" that prevents premature carbon dissolution, and thus, contributes to graphene growth on SiO2/Si. The produced graphene exhibits a high carrier mobility of up to 3000 cm(2) V-1 s(-1) at room temperature and standard half-integer quantum oscillations. Our work provides a promising simple transfer-free approach using solid carbon sources to obtain high-quality graphene for practical applications.

SCI ; EI

英语

其他

Raith-HKUST Nanotechnology Laboratory for the electron-beam lithography facility[SEG HKUST08]

Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics

Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied

WOS:000369591400013

ROYAL SOC CHEMISTRY

20160601902690

Dielectric materials ; Film growth ; Heat treatment ; Low-k dielectric ; Monolayers ; Silica ; Substrates

Heat Treatment Processes:537.1 ; Dielectric Materials:708.1 ; Nanotechnology:761 ; Chemical Products Generally:804

Web of Science

1.Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China
2.Hanshan Normal Univ, Dept Phys & Elect Engn, Chaozhou, Peoples R China
3.Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England
4.South Univ Sci & Technol China, Dept Mat Sci & Engn, Shenzhen, Peoples R China
5.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China

Wu, Zefei,Guo, Yanqing,Guo, Yuzheng,et al. A fast transfer-free synthesis of high-quality monolayer graphene on insulating substrates by a simple rapid thermal treatment[J]. Nanoscale,2016,8(5):2594-2600.

Wu, Zefei.,Guo, Yanqing.,Guo, Yuzheng.,Huang, Rui.,Xu, Shuigang.,...&Wang, Ning.(2016).A fast transfer-free synthesis of high-quality monolayer graphene on insulating substrates by a simple rapid thermal treatment.Nanoscale,8(5),2594-2600.

Wu, Zefei,et al."A fast transfer-free synthesis of high-quality monolayer graphene on insulating substrates by a simple rapid thermal treatment".Nanoscale 8.5(2016):2594-2600.