| 题名 | Overshoot Stress on Ultra-Thin HfO2 High-kappa Layer and Its Impact on Lifetime Extraction |
| 作者 | |
| 通讯作者 | Yu, HongYu |
| 发表日期 | 2015-12
|
| DOI | |
| 发表期刊 | |
| ISSN | 0741-3106
|
| EISSN | 1558-0563
|
| 卷号 | 36期号:12页码:1267-1270 |
| 摘要 | Overshoot stress (stimulating the actual IC operating condition) on an ultra-thin HfO2 (EOT similar to 0.8 nm) high-kappa layer is investigated, which reveals that overshoot is of great importance to high-kappa layer leakage degradation. The dynamic stress-induced leakage current is correlated with traps generation and recovery, which is dependent on stress input and release. A degradation model based on the oxygen vacancies is proposed to interpret the experimental observation. |
| 关键词 | |
| 相关链接 | [来源记录] |
| 收录类别 | |
| 语种 | 英语
|
| 学校署名 | 第一
; 通讯
|
| WOS研究方向 | Engineering
|
| WOS类目 | Engineering, Electrical & Electronic
|
| WOS记录号 | WOS:000365295300004
|
| 出版者 | |
| EI入藏号 | 20161002074970
|
| EI主题词 | Oxygen Vacancies
|
| EI分类号 | Chemical Products Generally:804
; Crystalline Solids:933.1
|
| ESI学科分类 | ENGINEERING
|
| 来源库 | Web of Science
|
| 引用统计 |
被引频次[WOS]：1
|
| 成果类型 | 期刊论文 |
| 条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/29876 |
| 专题 | 南方科技大学 公共分析测试中心 工学院_深港微电子学院 |
| 作者单位 | 1.South Univ Sci & Technol China, Shenzhen 518055, Peoples R China 2.Chinese Acad Sci, Key Lab Microelect Devices & Integrated Technol, Inst Microelect, Beijing 100029, Peoples R China 3.Chinese Acad Sci, Key Lab Microelect Devices & Integrated Technol, Inst Microelect, Shenzhen 100029, Peoples R China 4.Shenzhen Univ, Shenzhen 518060, Peoples R China |
| 第一作者单位 | 南方科技大学 |
| 通讯作者单位 | 南方科技大学 |
| 第一作者的第一单位 | 南方科技大学 |
| 推荐引用方式 GB/T 7714 |
Wan, Guangxing,Duan, Tianli,Zhang, Shuxiang,et al. Overshoot Stress on Ultra-Thin HfO2 High-kappa Layer and Its Impact on Lifetime Extraction[J]. IEEE ELECTRON DEVICE LETTERS,2015,36(12):1267-1270.
|
| APA |
Wan, Guangxing.,Duan, Tianli.,Zhang, Shuxiang.,Jiang, Lingli.,Tang, Bo.,...&Yu, HongYu.(2015).Overshoot Stress on Ultra-Thin HfO2 High-kappa Layer and Its Impact on Lifetime Extraction.IEEE ELECTRON DEVICE LETTERS,36(12),1267-1270.
|
| MLA |
Wan, Guangxing,et al."Overshoot Stress on Ultra-Thin HfO2 High-kappa Layer and Its Impact on Lifetime Extraction".IEEE ELECTRON DEVICE LETTERS 36.12(2015):1267-1270.
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| 条目包含的文件 | ||||||
| 文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | 操作 | |
| 07298368.pdf（1754KB） | -- | -- | 限制开放 | -- | ||
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