He plasma treatment of transparent conductive ZnO thin films

Yao, Jian Ke1; Chen, Shuming1; Sun, Xiao Wei1; Kwok, Hoi Sing2

2015-11-15

10.1016/j.apsusc.2015.07.165

APPLIED SURFACE SCIENCE   影响因子和分区

0169-4332

1873-5584

The electrical resistivity, structure, and composition and work function of ZnO thin films deposited by sputtering and post-treated with He plasma were studied. First, the treating effects of ZnO films by He, Ar and H-2 plasmas were compared. The electrical resistivity depended on the treated type of plasmas, the treated powers and times, and the thickness of film. The Ar plasma has the highest ion moment energy to disrupt the Zn-O bonding during treatment. The injection of H in ZnO can also act as the shallow donors to decrease the resistivity besides by desorption of weakly bonded oxygen species. The H-2 and He plasmas have the etching effects on the surface of ZnO films at higher power and time. For the ZnO films before and after optimized He plasma treating, the electrical resistivity decreased from 104 to 7.0 x 10(-3) Omega cm, the carrier concentration increased from 7.0 x 10(15) to 1.8 x 10(2)degrees cm(-3), and the interstitial Zn and 0 vacancy deficiencies increased from 29.1 to 58.7% and 52.1 to 71.4%, and the work functions reduced from 8.5 to 7.6 eV, but with no significant change of crystal structure. (C) 2015 Elsevier B.V. All rights reserved.

Conductive ZnO thin film He plasma treating Interstitial Zn and O vacancy deficiencies Work function

SCI ; EI

英语

第一 ; 通讯

Special Support Program of Guangdong Province[2014TQ01X015]

Chemistry ; Materials Science ; Physics

Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter

WOS:000363815700095

ELSEVIER SCIENCE BV

20154201414588

Argon ; Carrier concentration ; Conductive films ; Crystal structure ; Electric conductivity ; Etching ; Helium ; II-VI semiconductors ; Metallic films ; Optical films ; Plasma applications ; Work function ; Zinc oxide

Electricity: Basic Concepts and Phenomena:701.1 ; Conducting Materials:708.2 ; Optical Devices and Systems:741.3 ; Chemical Reactions:802.2 ; Chemical Products Generally:804 ; Inorganic Compounds:804.2 ; Atomic and Molecular Physics:931.3 ; Plasma Physics:932.3 ; Crystal Lattice:933.1.1

MATERIALS SCIENCE

Web of Science

1.South Univ Sci & Technol China, Dept Elect & Elect Engn, Shenzhen 518055, Guangdong, Peoples R China
2.Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China

Yao, Jian Ke,Chen, Shuming,Sun, Xiao Wei,et al. He plasma treatment of transparent conductive ZnO thin films[J]. APPLIED SURFACE SCIENCE,2015,355:702-705.

Yao, Jian Ke,Chen, Shuming,Sun, Xiao Wei,&Kwok, Hoi Sing.(2015).He plasma treatment of transparent conductive ZnO thin films.APPLIED SURFACE SCIENCE,355,702-705.

Yao, Jian Ke,et al."He plasma treatment of transparent conductive ZnO thin films".APPLIED SURFACE SCIENCE 355(2015):702-705.