Doping induces large variation in the electrical properties of MoS2 monolayers

Eshun, Kwesi1; Xiong, Hao D.2; Yu, Sheng1; Li, Qiliang1

2015-04

10.1016/j.sse.2015.01.002

SOLID-STATE ELECTRONICS   影响因子和分区

0038-1101

1879-2405

As the devices are being shrunk into nanoscale, it is increasingly difficult, if not impossible, to precisely control the dopant position and number in low-dimensional nanomaterials. In this work, we have investigated doping effect on the electrical properties of n-type and p-type MoS2 monolayer, one of the representative two-dimensional layered semiconductors. We found that the sheet resistance of a nanoscale MoS2 monolayer exhibited large variation (>35%) as the dopant number or position changes, although the variation in band gap is relatively small. The variation increases as the size of MoS2 monolayer decreases. This variation in the doped MoS2 monolayer nanoribbons seems inevitable and will cause significant device-to-device variation that the integrated circuit cannot tolerate. This study also suggests that these two-dimensional semiconductors should be protected from unintentional or intentional doping if they are used in the transistors in future integrated circuits. (C) 2015 Elsevier Ltd. All rights reserved.

Nanomaterials Semiconductor Doping MOSFET Two-dimensional materials

SCI ; EI

英语

通讯

U.S. NIST[60NANB11D148]

Engineering ; Physics

Engineering, Electrical & Electronic ; Physics, Applied ; Physics, Condensed Matter

WOS:000352747100006

PERGAMON-ELSEVIER SCIENCE LTD

20150600484986

Doping (additives) ; Energy gap ; Integrated circuits ; Layered semiconductors ; Molybdenum compounds ; Monolayers ; Nanostructured materials ; Semiconductor doping ; Semiconductor materials

Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Nanotechnology:761

PHYSICS

Web of Science

1.George Mason Univ, Dept Elect & Comp Engn, Fairfax, VA 22030 USA
2.South Univ Sci & Technol China, Dept Elect & Elect Engn, Shenzhen, Peoples R China

Eshun, Kwesi,Xiong, Hao D.,Yu, Sheng,et al. Doping induces large variation in the electrical properties of MoS2 monolayers[J]. SOLID-STATE ELECTRONICS,2015,106:44-49.

Eshun, Kwesi,Xiong, Hao D.,Yu, Sheng,&Li, Qiliang.(2015).Doping induces large variation in the electrical properties of MoS2 monolayers.SOLID-STATE ELECTRONICS,106,44-49.

Eshun, Kwesi,et al."Doping induces large variation in the electrical properties of MoS2 monolayers".SOLID-STATE ELECTRONICS 106(2015):44-49.