Phase transition, effective mass and carrier mobility of MoS2 monolayer under tensile strain

Yu, Sheng1; Xiong, Hao D.2,3; Eshun, Kwesi1; Yuan, Hui1,3; Li, Qiliang1

2015-01-15

10.1016/j.apsusc.2014.11.079

APPLIED SURFACE SCIENCE   影响因子和分区

0169-4332

1873-5584

We report a computational study on the impact of tensile strain on MoS2 monolayer. The transition between direct and indirect bandgap structure and the transition between semiconductor and metal phases in the monolayer have been investigated with tensile strain along all direction configurations with both x-axis and y-axis components epsilon(xy) (epsilon(x) and epsilon(y)). Electron effective mass and the hole effective mass are isotropic for biaxial strain epsilon(xy) = epsilon(x) = epsilon(y) and anisotropic for epsilon(xy) with epsilon(x) not equal epsilon(y). The carrier effective mass behaves differently along different directions in response to the tensile strain. In addition, the impact of strain on carrier mobility has been studied by using the deformation potential theory. The electron mobility increases over 10 times with the biaxial strain: epsilon(x) = epsilon(y) = 9.5%. Also, the mobility decreases monotonically with the increasing temperature as mu similar to T-1. These results are very important for future nanotechnology based on two-dimensional materials. (C) 2014 Elsevier B.V. All rights reserved.

Strain effect Two-dimensional materials MoS2 monolayer Mobility enhancement Phase transition

SCI ; EI

英语

其他

U.S. NSF[ECCS-1407807]

Chemistry ; Materials Science ; Physics

Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter

WOS:000347105500004

ELSEVIER SCIENCE BV

20151600752071

Carrier mobility ; Computation theory ; Layered semiconductors ; Molybdenum compounds ; Monolayers ; Phase transitions ; Sulfur compounds

Semiconducting Materials:712.1 ; Computer Theory, Includes Formal Logic, Automata Theory, Switching Theory, Programming Theory:721.1 ; Physical Chemistry:801.4 ; Mechanics:931.1

MATERIALS SCIENCE

Web of Science

1.George Mason Univ, Dept Elect & Comp Engn, Fairfax, VA 22030 USA
2.South Univ Sci & Technol China, Dept Elect & Elect Engn, Shenzhen, Peoples R China
3.NIST, Semicond & Dimens Metrol Div, Gaithersburg, MD 20899 USA

Yu, Sheng,Xiong, Hao D.,Eshun, Kwesi,et al. Phase transition, effective mass and carrier mobility of MoS2 monolayer under tensile strain[J]. APPLIED SURFACE SCIENCE,2015,325(C):27-32.

Yu, Sheng,Xiong, Hao D.,Eshun, Kwesi,Yuan, Hui,&Li, Qiliang.(2015).Phase transition, effective mass and carrier mobility of MoS2 monolayer under tensile strain.APPLIED SURFACE SCIENCE,325(C),27-32.

Yu, Sheng,et al."Phase transition, effective mass and carrier mobility of MoS2 monolayer under tensile strain".APPLIED SURFACE SCIENCE 325.C(2015):27-32.