A study of lateral Schottky contacts in WSe2 and MoS2 field effect transistors using scanning photocurrent microscopy

Yi, Ya1; Wu, Changming1; Liu, Hongchao1; Zeng, Jiali2; He, Hongtao2; Wang, Jiannong1

2015

10.1039/c5nr04592d

Nanoscale   影响因子和分区

2040-3364

2040-3372

Schottky contacts, formed at metal/semiconductor interfaces, always have a large impact on the performance of field-effect transistors (FETs). Here, we report the experimental studies of Schottky contacts in two-dimensional (2D) transition metal dichalcogenide (TMDC) FET devices. We use scanning photocurrent microscopy (SPCM) to directly probe the spatial distribution of the in-plane lateral Schottky depletion regions at the metal/2D-TMDC interfaces. The laser incident position dependent and the gate voltage tunable polarity and magnitude of the short-circuit photocurrent reveal the existence of the in-plane Schottky depletion region laterally extending away from the metal contact edges along the channel. This lateral depletion region length is estimated to be around several microns and can be effectively tuned by the gate and drain-source biases. Our results solidify the importance of lateral Schottky depletion regions in the photoresponse of 2D TMDC optoelectronic devices.

SCI ; EI

英语

通讯

National Natural Science Foundation of China[11204183] ; National Natural Science Foundation of China[11374135]

Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics

Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied

WOS:000361834100021

ROYAL SOC CHEMISTRY

20154001333862

Layered semiconductors ; Molybdenum compounds ; Optoelectronic devices ; Photocurrents ; Selenium compounds ; Transition metals ; Tungsten compounds

Metallurgy and Metallography:531 ; Semiconductor Devices and Integrated Circuits:714.2 ; Light/Optics:741.1 ; Optical Devices and Systems:741.3

Web of Science

1.Hong Kong Univ Sci & Technol, Dept Phys, Clear Water Bay, Hong Kong, Peoples R China
2.South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Guangdong, Peoples R China

Yi, Ya,Wu, Changming,Liu, Hongchao,et al. A study of lateral Schottky contacts in WSe2 and MoS2 field effect transistors using scanning photocurrent microscopy[J]. Nanoscale,2015,7(38):15711-15718.

Yi, Ya,Wu, Changming,Liu, Hongchao,Zeng, Jiali,He, Hongtao,&Wang, Jiannong.(2015).A study of lateral Schottky contacts in WSe2 and MoS2 field effect transistors using scanning photocurrent microscopy.Nanoscale,7(38),15711-15718.

Yi, Ya,et al."A study of lateral Schottky contacts in WSe2 and MoS2 field effect transistors using scanning photocurrent microscopy".Nanoscale 7.38(2015):15711-15718.