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题名

Tunable Interaction-Induced Localization of Surface Electrons in Antidot Nanostructured Bi2Te3 Thin Films

作者
通讯作者Shen, Shun-Qing; Wang, Jiannong
发表日期
2014-09
DOI
发表期刊
ISSN
1936-0851
EISSN
1936-086X
卷号8期号:9页码:9616-9621
摘要

Recently, a logarithmic decrease of conductivity has been observed in topological insulators at low temperatures, implying a tendency of localization of surface electrons. Here, we report quantum transport experiments on the topological insulator Bi2Te3 thin films with arrayed antidot nanostructures. With increasing density of the antidots, a systematic decrease is observed in the slope of the logarithmic temperature-dependent conductivity curves, indicating the electron-electron interaction can be tuned by the antidots. Meanwhile, the weak antilocalization effect revealed in magnetoconductivity exhibits an enhanced dominance of electron-electron interaction among decoherence mechanisms. The observation can be understood from an antidot-induced reduction of the effective dielectric constant, which controls the interactions between the surface electrons. Our results clarify the indispensable role of the electron-electron interaction in the localization of surface electrons and indicate the localization of surface electrons in an interacting topological insulator.

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相关链接[来源记录]
收录类别
SCI ; EI
语种
英语
重要成果
NI论文
学校署名
其他
资助项目
National Natural Science Foundation of China[11204183]
WOS研究方向
Chemistry ; Science & Technology - Other Topics ; Materials Science
WOS类目
Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号
WOS:000342184400095
出版者
EI入藏号
20151300681028
EI主题词
Bismuth Compounds ; Electric Insulators ; Electron-electron Interactions ; Quantum Chemistry ; Surface States ; Tellurium Compounds ; Thin Films ; Topological Insulators
EI分类号
Physical Chemistry:801.4 ; Classical Physics ; Quantum Theory ; Relativity:931 ; Atomic And Molecular Physics:931.3 ; High Energy Physics ; Nuclear Physics ; Plasma Physics:932
来源库
Web of Science
引用统计
被引频次[WOS]:25
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/30153
专题理学院_物理系
作者单位
1.Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China
2.Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China
3.South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Guangdong, Peoples R China
推荐引用方式
GB/T 7714
Liu, Hong-Chao,Lu, Hai-Zhou,He, Hong-Tao,et al. Tunable Interaction-Induced Localization of Surface Electrons in Antidot Nanostructured Bi2Te3 Thin Films[J]. ACS Nano,2014,8(9):9616-9621.
APA
Liu, Hong-Chao.,Lu, Hai-Zhou.,He, Hong-Tao.,Li, Baikui.,Liu, Shi-Guang.,...&Wang, Jiannong.(2014).Tunable Interaction-Induced Localization of Surface Electrons in Antidot Nanostructured Bi2Te3 Thin Films.ACS Nano,8(9),9616-9621.
MLA
Liu, Hong-Chao,et al."Tunable Interaction-Induced Localization of Surface Electrons in Antidot Nanostructured Bi2Te3 Thin Films".ACS Nano 8.9(2014):9616-9621.
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