Transition metal oxides on organic semiconductors

Zhao, Yongbiao1; Zhang, Jun; Liu, Shuwei1; Gao, Yuan1,2; Yang, Xuyong1; Leck, Kheng Swee1; Abiyasa, Agus Putu1; Divayana, Yoga1; Mutlugun, Evren1; Tan, Swee Tiam1; Xiong, Qihua2; Demir, Hilmi Volkan1,2,3,4; Sun, Xiao Wei1,5

2014-04

10.1016/j.orgel.2014.01.011

ORGANIC ELECTRONICS   影响因子和分区

1566-1199

1878-5530

Transition metal oxides (TMOs) on organic semiconductors (OSs) structure has been widely used in inverted organic optoelectronic devices, including inverted organic light-emitting diodes (OLEDs) and inverted organic solar cells (OSCs), which can improve the stability of such devices as a result of improved protection of air sensitive cathode. However, most of these reports are focused on the anode modification effect of TMO and the nature of TMO-on-OS is not fully understood. Here we show that the OS on TMO forms a two-layer structure, where the interface mixing is minimized, while for TMO-on-OS, due to the obvious diffusion of TMO into the OS, a doping-layer structure is formed. This is evidenced by a series of optical and electrical studies. By studying the TMO diffusion depth in different OS, we found that this process is governed by the thermal property of the OS. The TMO tends to diffuse deeper into the OS with a lower evaporation temperature. It is shown that the TMO can diffuse more than 20 nm into the OS, depending on the thermal property of the OS. We also show that the TMO-on-OS structure can replace the commonly used OS with TMO doping structure, which is a big step toward in simplifying the fabrication process of the organic optoelectronic devices. (C) 2014 Elsevier B.V. All rights reserved.

p-doping Transition metal oxide Organic semiconductor Diffusion Organic light-emitting diode

SCI ; EI

英语

其他

National Natural Science Foundation of China (NSFC)[61006037] ; National Natural Science Foundation of China (NSFC)[61076015]

Materials Science ; Physics

Materials Science, Multidisciplinary ; Physics, Applied

WOS:000333097300006

ELSEVIER SCIENCE BV

20141017417283

Diffusion ; Electrodes ; Optoelectronic devices ; Organic semiconductor materials ; Organic solar cells ; Semiconductor diodes ; Semiconductor doping ; Thermodynamic properties ; Transition metal oxides ; Transition metals

Metallurgy and Metallography:531 ; Thermodynamics:641.1 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Optical Devices and Systems:741.3

PHYSICS

Web of Science

1.Nanyang Technol Univ, Luminous Ctr Excellence Semicond Lighting & Displ, Sch Elect & Engn, Singapore 639798, Singapore
2.Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore
3.Bilkent Univ, Dept Elect & Elect Engn, Dept Phys, TR-06800 Ankara, Turkey
4.Bilkent Univ, UNAM Inst Mat Sci & Nanotechnol, TR-06800 Ankara, Turkey
5.South Univ Sci & Technol, Shenzhen 518055, Guangdong, Peoples R China

Zhao, Yongbiao,Zhang, Jun,Liu, Shuwei,et al. Transition metal oxides on organic semiconductors[J]. ORGANIC ELECTRONICS,2014,15(4):871-877.

Zhao, Yongbiao.,Zhang, Jun.,Liu, Shuwei.,Gao, Yuan.,Yang, Xuyong.,...&Sun, Xiao Wei.(2014).Transition metal oxides on organic semiconductors.ORGANIC ELECTRONICS,15(4),871-877.

Zhao, Yongbiao,et al."Transition metal oxides on organic semiconductors".ORGANIC ELECTRONICS 15.4(2014):871-877.