| 题名 | Solution Processed Tungsten Oxide Interfacial Layer for Efficient Hole-Injection in Quantum Dot Light-Emitting Diodes |
| 作者 | |
| 通讯作者 | Demir, Hilmi Volkan |
| 发表日期 | 2014-01-29
|
| DOI | |
| 发表期刊 | |
| ISSN | 1613-6810
|
| EISSN | 1613-6829
|
| 卷号 | 10期号:2页码:247-252 |
| 摘要 | A highly efficient and stable QLED using an inorganic WO3 nanoparticle film as a hole injection layer is demonstrated.The resulting WO3 nanoparticle-based QLEDs also exhibit superior performance compared to that of the present PEDOT:PSS-based QLEDs. The results indicate that WO3 nanoparticles are promising solution-processed buffer layer materials and serve as a strong candidate for QLED technology towards the practical applications in the next-generation lighting and displays. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. |
| 相关链接 | [来源记录] |
| 收录类别 | |
| 语种 | 英语
|
| 学校署名 | 其他
|
| 资助项目 | National Natural Science Foundation of China (NSFC)[61006037]
; National Natural Science Foundation of China (NSFC)[61076015]
|
| WOS研究方向 | Chemistry
; Science & Technology - Other Topics
; Materials Science
; Physics
|
| WOS类目 | Chemistry, Multidisciplinary
; Chemistry, Physical
; Nanoscience & Nanotechnology
; Materials Science, Multidisciplinary
; Physics, Applied
; Physics, Condensed Matter
|
| WOS记录号 | WOS:000331112100003
|
| 出版者 | |
| EI入藏号 | 20140517259992
|
| EI主题词 | Buffer Layers
; Conducting Polymers
; Electron Injection
; Light Emitting Diodes
; Nanocrystals
; Nanoparticles
; Oxides
; Quantum Efficiency
; Semiconductor Quantum Dots
; Tungsten Compounds
|
| EI分类号 | Conducting Materials:708.2
; Semiconductor Devices And Integrated Circuits:714.2
; Nanotechnology:761
; Chemical Products Generally:804
; Quantum Theory
; Quantum Mechanics:931.4
; Solid State Physics:933
; Crystalline Solids:933.1
|
| 来源库 | Web of Science
|
| 引用统计 |
被引频次[WOS]：104
|
| 成果类型 | 期刊论文 |
| 条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/30236 |
| 专题 | 南方科技大学 工学院_电子与电气工程系 |
| 作者单位 | 1.Nanyang Technol Univ, Sch Elect & Elect Engn, Luminous Ctr Excellence Semicond Lighting & Disp, Singapore 639798, Singapore 2.Bilkent Univ, UNAM Inst Mat Sci & Nanotechnol, Dept Elect & Elect Engn, Dept Phys, TR-06800 Bilkent, Turkey 3.Nanyang Technol Univ, Sch Phys & Math Sci, Singapore 639798, Singapore 4.S China Univ Technol, Inst Opt Commun Mat, State Key Lab Luminescence Mat & Devices, Guangzhou 510641, Guangdong, Peoples R China 5.ASTAR, Inst Mat Res & Engn, Singapore 117602, Singapore 6.South Univ Sci & Technol, Shenzhen 518055, Guangdong, Peoples R China |
| 推荐引用方式 GB/T 7714 |
Yang, Xuyong,Mutlugun, Evren,Zhao, Yongbiao,et al. Solution Processed Tungsten Oxide Interfacial Layer for Efficient Hole-Injection in Quantum Dot Light-Emitting Diodes[J]. Small,2014,10(2):247-252.
|
| APA |
Yang, Xuyong.,Mutlugun, Evren.,Zhao, Yongbiao.,Gao, Yuan.,Leck, Kheng Swee.,...&Sun, Xiao Wei.(2014).Solution Processed Tungsten Oxide Interfacial Layer for Efficient Hole-Injection in Quantum Dot Light-Emitting Diodes.Small,10(2),247-252.
|
| MLA |
Yang, Xuyong,et al."Solution Processed Tungsten Oxide Interfacial Layer for Efficient Hole-Injection in Quantum Dot Light-Emitting Diodes".Small 10.2(2014):247-252.
|
| 条目包含的文件 | ||||||
| 文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | 操作 | |
| smll.201301199.pdf（1311KB） | -- | -- | 限制开放 | -- | ||
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