| 题名 | A ZnTaOx Based Resistive Switching Random Access Memory |
| 作者 | |
| 通讯作者 | Zheng, K. |
| 发表日期 | 2014
|
| DOI | |
| 发表期刊 | |
| ISSN | 2162-8742
|
| 卷号 | 3期号:7页码:Q36-Q39 |
| 摘要 | The improved resistive switching performance of TaOx by introducing ZnO was reported in this paper. By co-sputtering, the ZnTaOx device shows better endurance, lower operating voltage and more uniform resistance distribution. The improvement is mainly due to the more abundant intrinsic defects such as oxygen vacancies which facilitates the formation of conductive filaments in the oxide compound. (C) 2014 The Electrochemical Society. All rights reserved. |
| 相关链接 | [来源记录] |
| 收录类别 | |
| 语种 | 英语
|
| 学校署名 | 其他
|
| 资助项目 | National Natural Science Foundation of China[61177061]
; National Natural Science Foundation of China[61177014]
; National Natural Science Foundation of China[61076015]
; National Natural Science Foundation of China[11204208]
|
| WOS研究方向 | Materials Science
; Physics
|
| WOS类目 | Materials Science, Multidisciplinary
; Physics, Applied
|
| WOS记录号 | WOS:000337132400008
|
| 出版者 | |
| EI入藏号 | 20142717879357
|
| EI主题词 | Ii-vi Semiconductors
; Zinc Oxide
|
| EI分类号 | Data Storage, Equipment And Techniques:722.1
; Inorganic Compounds:804.2
|
| 来源库 | Web of Science
|
| 引用统计 |
被引频次[WOS]：8
|
| 成果类型 | 期刊论文 |
| 条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/30263 |
| 专题 | 工学院_电子与电气工程系 |
| 作者单位 | 1.Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore 2.Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117608, Singapore 3.Singapore Agcy Sci Technol & Res A STAR, Data Storage Inst, Singapore 117608, Singapore 4.South Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Guangdong, Peoples R China |
| 推荐引用方式 GB/T 7714 |
Zheng, K.,Zhao, J. L.,Leck, K. S.,et al. A ZnTaOx Based Resistive Switching Random Access Memory[J]. ECS SOLID STATE LETT,2014,3(7):Q36-Q39.
|
| APA |
Zheng, K.,Zhao, J. L.,Leck, K. S.,Teo, K. L.,Yeo, E. G.,&Sun, X. W..(2014).A ZnTaOx Based Resistive Switching Random Access Memory.ECS SOLID STATE LETT,3(7),Q36-Q39.
|
| MLA |
Zheng, K.,et al."A ZnTaOx Based Resistive Switching Random Access Memory".ECS SOLID STATE LETT 3.7(2014):Q36-Q39.
|
| 条目包含的文件 | ||||||
| 文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | 操作 | |
| Zheng_2014_ECS_Solid（783KB） | -- | -- | 限制开放 | -- | ||
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