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题名

Design guidelines for slanting silicon nanowire arrays for solar cell application

作者
通讯作者Rusli
发表日期
2013-08-28
DOI
发表期刊
ISSN
0021-8979
EISSN
1089-7550
卷号114期号:8
摘要
The reflectance and absorption characteristics of slanting silicon nanowires (SiNWs) structure have been simulated using finite element method to provide a design guideline for its application in solar cell. The slanting angle for the nanowire structure is set at 40 degrees on Si (111) wafer. The impact of the structural periodicity (P) and wire diameter/periodicity (D/P) ratio on the optical characteristics of the slanting SiNW has been systematically analyzed. It has been found that due to the much suppressed light reflection and stronger light trapping ability, the light absorption is significantly enhanced for the slanting SiNW structure compared with vertical SiNW structure. The optimal absorption condition is achieved when P = 800 nm and D/P = 0.7, yielding the highest ultimate efficiency of 33.45%. The result is better than the 28.36% that can be achieved for optimum vertical SiNWs. A comparison of the absorption characteristics of optimum slanting and vertical SiNWs structures is presented and analyzed in terms of the physical light interaction with the structures. (C) 2013 AIP Publishing LLC.
相关链接[来源记录]
收录类别
SCI ; EI
语种
英语
学校署名
其他
资助项目
Economic Development Board - Singapore[] ; Ministry of Education - Singapore[] ; Ministry of Education - Singapore[] ; Economic Development Board - Singapore[]
WOS研究方向
Physics
WOS类目
Physics, Applied
WOS记录号
WOS:000323911100082
出版者
EI入藏号
20133816761366
EI主题词
Design ; Light absorption ; Light reflection ; Nanowires ; Silicon compounds ; Silicon solar cells ; Silicon wafers ; Structural optimization
EI分类号
Solar Cells:702.3 ; Semiconductor Devices and Integrated Circuits:714.2 ; Light/Optics:741.1 ; Nanotechnology:761 ; Optimization Techniques:921.5 ; Solid State Physics:933
ESI学科分类
PHYSICS
来源库
Web of Science
引用统计
被引频次[WOS]:25
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/30322
专题南方科技大学
工学院_深港微电子学院
作者单位
1.Nanyang Technol Univ, NOVITAS, Nanoelect Ctr Excellence, Sch Elect & Elect Engn, Singapore 639798, Singapore
2.ASTAR, Singapore Inst Mfg Technol, Singapore, Singapore
3.South Univ Sci & Technol China, Shenzhen, Peoples R China
推荐引用方式
GB/T 7714
Hong, Lei,Rusli,Wang, Xincai,et al. Design guidelines for slanting silicon nanowire arrays for solar cell application[J]. JOURNAL OF APPLIED PHYSICS,2013,114(8).
APA
Hong, Lei,Rusli,Wang, Xincai,Zheng, Hongyu,Wang, Hao,&Yu, HongYu.(2013).Design guidelines for slanting silicon nanowire arrays for solar cell application.JOURNAL OF APPLIED PHYSICS,114(8).
MLA
Hong, Lei,et al."Design guidelines for slanting silicon nanowire arrays for solar cell application".JOURNAL OF APPLIED PHYSICS 114.8(2013).
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