Influence of n-type versus p-type AlGaN electron-blocking layer on InGaN/GaN multiple quantum wells light-emitting diodes

Ji, Yun1; Zhang, Zi-Hui1; Kyaw, Zabu1; Tan, Swee Tiam1; Ju, Zhen Gang1; Zhang, Xue Liang1; Liu, Wei1; Sun, Xiao Wei1,2; Demir, Hilmi Volkan1,3,4

2013-07-29

10.1063/1.4817381

APPLIED PHYSICS LETTERS   影响因子和分区

0003-6951

The effect of n-AlGaN versus p-AlGaN electron-blocking layers (EBLs) on the performance of InGaN/GaN light-emitting diodes is studied in this work. Experimental results suggest that the n-type EBL leads to higher optical output power and external quantum efficiency, compared to the devices with p-AlGaN EBL, which is commonly used today. Numerical simulations on the carrier distribution and energy band diagram reveal that the n-AlGaN EBL is more efficient in preventing electron overflow, while not blocking the hole injection into the active region, hence leading to higher radiative recombination rate within the multiple quantum wells active region. (C) 2013 AIP Publishing LLC.

SCI ; EI

英语

NI论文

其他

Singapore Agency for Science, Technology and Research (A*STAR) SERC[112-120-2009]

Physics

Physics, Applied

WOS:000322723000114

AMER INST PHYSICS

20133516656422

Aluminum alloys ; Aluminum gallium nitride ; Gallium alloys ; III-V semiconductors ; Indium alloys ; Light emitting diodes ; Quantum efficiency ; Semiconductor alloys

Aluminum Alloys:541.2 ; Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Semiconductor Devices and Integrated Circuits:714.2 ; Inorganic Compounds:804.2 ; Quantum Theory; Quantum Mechanics:931.4

PHYSICS

Web of Science

1.Nanyang Technol Univ, Sch Phys & Math Sci, Sch Elect & Elect Engn, LUMINOUS Ctr Excellence Semicond Lighting & Displ, Singapore 639798, Singapore
2.South Univ Sci & Technol China, Shenzhen 518055, Guangdong, Peoples R China
3.Bilkent Univ, Dept Phys, Dept Elect & Elect, TR-06800 Ankara, Turkey
4.Bilkent Univ, UNAM Inst Mat Sci & Nanotechnol, TR-06800 Ankara, Turkey

Ji, Yun,Zhang, Zi-Hui,Kyaw, Zabu,et al. Influence of n-type versus p-type AlGaN electron-blocking layer on InGaN/GaN multiple quantum wells light-emitting diodes[J]. APPLIED PHYSICS LETTERS,2013,103(5).

Ji, Yun.,Zhang, Zi-Hui.,Kyaw, Zabu.,Tan, Swee Tiam.,Ju, Zhen Gang.,...&Demir, Hilmi Volkan.(2013).Influence of n-type versus p-type AlGaN electron-blocking layer on InGaN/GaN multiple quantum wells light-emitting diodes.APPLIED PHYSICS LETTERS,103(5).

Ji, Yun,et al."Influence of n-type versus p-type AlGaN electron-blocking layer on InGaN/GaN multiple quantum wells light-emitting diodes".APPLIED PHYSICS LETTERS 103.5(2013).