南方科技大学知识苑(SUSTech KC): Quantum Dot Light-Emitting Diode with Quantum Dots Inside the Hole Transporting Layers

题名	Quantum Dot Light-Emitting Diode with Quantum Dots Inside the Hole Transporting Layers
作者	Leck, Kheng Swee 1; Divayana, Yoga 1,3; Zhao, Dewei 1; Yang, Xuyong 1; Abiyasa, Agus Putu 1; Mutlugun, Evren 1,4; Gao, Yuan 1; Liu, Shuwei 1; Tan, Swee Tiam 1; Sun, Xiao Wei1,5 ; Demir, Hilmi Volkan 1,2,4
通讯作者	Sun, Xiao Wei
发表日期	2013-07-24
DOI	10.1021/am400903c
发表期刊	ACS Applied Materials & Interfaces 影响因子和分区
ISSN	1944-8244
EISSN	1944-8252
卷号	5 期号:14页码:6535-6540
摘要	We report a hybrid, quantum dot (QD)-based, organic light-emitting diode architecture using a noninverted structure with the QDs sandwiched between hole transporting layers (HTLs) outperforming the reference device structure implemented in conventional noninverted architecture by over five folds and suppressing the blue emission that is otherwise observed in the conventional structure because of the excess electrons leaking towards the HTL. It is predicted in the new device structure that 97.44% of the exciton formation takes place in the QD layer, while 2.56% of the excitons form in the HTL. It is found that the enhancement in the external quantum efficiency is mainly due to the stronger confinement of exciton formation to the QDs.
关键词	Quantum Dots Hybrid Oleds Exciton Electroluminescence Hole Transport Layer Noninverted Structure
相关链接	[来源记录]
收录类别	SCI ; EI
语种	英语
学校署名	通讯
资助项目	Singapore Agency for Science, Technology and Research (ASTAR) SERC[112 120 2009] ; Singapore Agency for Science, Technology and Research (ASTAR) SERC[092 101 0057]
WOS研究方向	Science & Technology - Other Topics ; Materials Science
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号	WOS:000322432500016
出版者	AMER CHEMICAL SOC
EI入藏号	20133116570308
EI主题词	Electroluminescence ; Excitons ; Hole Mobility ; Light ; Nanocrystals ; Quantum Chemistry ; Semiconductor Quantum Dots
EI分类号	Semiconducting Materials:712.1 ; Semiconductor Devices And Integrated Circuits:714.2 ; Light, Optics And Optical Devices:741 ; Light/optics:741.1 ; Nanotechnology:761 ; Physical Chemistry:801.4
来源库	Web of Science
引用统计	被引频次[WOS]：41
成果类型	期刊论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/30332
专题	南方科技大学工学院_电子与电气工程系
作者单位	1.Nanyang Technol Univ, Sch Elect & Elect Engn, LUMINOUS Ctr Excellence Semicond Lighting & Displ, Singapore 639798, Singapore 2.Nanyang Technol Univ, Sch Phys & Math Sci, Singapore 639798, Singapore 3.Udayana Univ, Sch Elect Engn, Bali, Indonesia 4.Bilkent Univ, UNAM, Inst Mat Sci & Nanotechnol, Dept Elect & Elect Engn,Dept Phys, TR-06800 Ankara, Turkey 5.South Univ Sci & Technol China, Shenzhen 518055, Guangdong, Peoples R China
通讯作者单位	南方科技大学
推荐引用方式 GB/T 7714	Leck, Kheng Swee,Divayana, Yoga,Zhao, Dewei,et al. Quantum Dot Light-Emitting Diode with Quantum Dots Inside the Hole Transporting Layers[J]. ACS Applied Materials & Interfaces,2013,5(14):6535-6540.
APA	Leck, Kheng Swee.,Divayana, Yoga.,Zhao, Dewei.,Yang, Xuyong.,Abiyasa, Agus Putu.,...&Demir, Hilmi Volkan.(2013).Quantum Dot Light-Emitting Diode with Quantum Dots Inside the Hole Transporting Layers.ACS Applied Materials & Interfaces,5(14),6535-6540.
MLA	Leck, Kheng Swee,et al."Quantum Dot Light-Emitting Diode with Quantum Dots Inside the Hole Transporting Layers".ACS Applied Materials & Interfaces 5.14(2013):6535-6540.

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