Disorder-induced linear magnetoresistance in (221) topological insulator Bi2Se3 films

He, H. T.1,2; Liu, H. C.1; Li, B. K.1; Guo, X.3; Xu, Z. J.3; Xie, M. H.3; Wang, J. N.1

2013-07-15

10.1063/1.4816078

APPLIED PHYSICS LETTERS   影响因子和分区

0003-6951

A linear magnetoresistance (LMR) with strong temperature dependence and peculiar non-symmetry with respect to the applied magnetic field is observed in high-index (221) Bi2Se3 films. Different from the LMR observed in the previous studies which emphasize the role of gapless linear energy dispersion, this LMR is of disorder origin and possibly arises from the electron surface accumulation layer of the film. Besides, an abnormal negative magneto-resistance that shows a non-monotonic temperature dependence and persists even at high temperatures and in strong magnetic fields is also observed. (C) 2013 AIP Publishing LLC.

SCI ; EI

英语

NI期刊

其他

University Grants Committee of the HKSAR[SEG_CUHK06]

Physics

Physics, Applied

WOS:000322146300024

AMER INST PHYSICS

20133416636349

Magnetoresistance ; Selenium compounds ; Temperature distribution ; Topological insulators

Thermodynamics:641.1 ; Magnetism: Basic Concepts and Phenomena:701.2

PHYSICS

Web of Science

1.Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China
2.South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Guangdong, Peoples R China
3.Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China

He, H. T.,Liu, H. C.,Li, B. K.,et al. Disorder-induced linear magnetoresistance in (221) topological insulator Bi2Se3 films[J]. APPLIED PHYSICS LETTERS,2013,103(3).

He, H. T..,Liu, H. C..,Li, B. K..,Guo, X..,Xu, Z. J..,...&Wang, J. N..(2013).Disorder-induced linear magnetoresistance in (221) topological insulator Bi2Se3 films.APPLIED PHYSICS LETTERS,103(3).

He, H. T.,et al."Disorder-induced linear magnetoresistance in (221) topological insulator Bi2Se3 films".APPLIED PHYSICS LETTERS 103.3(2013).