Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers

Ju, Z. G.1; Liu, W.1; Zhang, Z-H.1; Tan, S. T.1; Ji, Y.1; Kyaw, Z. B.1; Zhang, X. L.1; Lu, S. P.1; Zhang, Y. P.1; Zhu, B. B.1,2; Hasanov, N.1; Sun, X. W.1,3; Demir, H. V.1,2,4,5

2013-06-17

10.1063/1.4811698

APPLIED PHYSICS LETTERS   影响因子和分区

0003-6951

InGaN/GaN light-emitting diodes (LEDs) with graded-thickness quantum barriers (GTQB) are designed and grown by metal-organic chemical-vapor deposition. The proposed GTQB structure, in which the barrier thickness decreases from the n-GaN to p-GaN side, was found to lead to an improved uniformity in the hole distribution and thus, radiative recombination rates across the active region. Consequently, the efficiency droop was reduced to 28.4% at a current density of 70 A/cm(2), which is much smaller than that of the conventional equal-thickness quantum barriers (ETQB) LED, which is 48.3%. Moreover, the light output power was enhanced from 770 mW for the ETQB LEDs to 870 mW for the GTQB LEDs at 70 A/cm(2). (C) 2013 AIP Publishing LLC.

SCI ; EI

英语

NI期刊

其他

Singapore Agency for Science, Technology and Research (A*STAR) SERC[112 120 2009]

Physics

Physics, Applied

WOS:000320962400103

AMER INST PHYSICS

20132816490703

Gallium nitride ; Metallorganic chemical vapor deposition ; Organic chemicals ; Organometallics

Chemical Reactions:802.2 ; Organic Compounds:804.1

PHYSICS

Web of Science

1.Nanyang Technol Univ, LUMINOUS Ctr Excellence Semicond Lighting & Displ, Sch Elect & Elect Engn, Singapore 639798, Singapore
2.Nanyang Technol Univ, Sch Phys & Math Sci, Singapore 639798, Singapore
3.South Univ Sci & Technol China, Dept Elect & Comp Engn, Shenzhen 518055, Guangdong, Peoples R China
4.Bilkent Univ, Dept Elect & Elect Engn, Dept Phys, TR-06800 Ankara, Turkey
5.Bilkent Univ, UNAM Inst Mat Sci & Nanotechnol, TR-06800 Ankara, Turkey

Ju, Z. G.,Liu, W.,Zhang, Z-H.,et al. Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers[J]. APPLIED PHYSICS LETTERS,2013,102(24).

Ju, Z. G..,Liu, W..,Zhang, Z-H..,Tan, S. T..,Ji, Y..,...&Demir, H. V..(2013).Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers.APPLIED PHYSICS LETTERS,102(24).

Ju, Z. G.,et al."Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers".APPLIED PHYSICS LETTERS 102.24(2013).