InGaN/GaN light-emitting diode with a polarization tunnel junction

Zhang, Zi-Hui1; Tan, Swee Tiam1; Kyaw, Zabu1; Ji, Yun1; Liu, Wei1; Ju, Zhengang1; Hasanov, Namig1; Sun, Xiao Wei1,2; Demir, Hilmi Volkan1,3,4,5

2013-05-13

10.1063/1.4806978

APPLIED PHYSICS LETTERS   影响因子和分区

0003-6951

1077-3118

We report InGaN/GaN light-emitting diodes (LED) comprising in situ integrated p(+)-GaN/InGaN/n(+)-GaN polarization tunnel junctions. Improved current spreading and carrier tunneling probability were obtained in the proposed device architecture, leading to the enhanced optical output power and external quantum efficiency. Compared to the reference InGaN/GaN LEDs using the conventional p(+)/n(+) tunnel junction, these devices having the polarization tunnel junction show a reduced forward bias, which is attributed to the polarization induced electric fields resulting from the in-plane biaxial compressive strain in the thin InGaN layer sandwiched between the p(+)-GaN and n(+)-GaN layers. (C) 2013 AIP Publishing LLC.

SCI ; EI

英语

NI期刊

其他

Singapore Agency for Science, Technology and Research (A*STAR) SERC[112 120 2009]

Physics

Physics, Applied

WOS:000320440800105

AMER INST PHYSICS

20132216367382

Electric fields ; Gallium alloys ; Gallium nitride ; III-V semiconductors ; Indium alloys ; Light emitting diodes ; Polarization ; Semiconductor alloys

Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Electricity: Basic Concepts and Phenomena:701.1 ; Semiconductor Devices and Integrated Circuits:714.2

PHYSICS

Web of Science

1.Nanyang Technol Univ, Sch Elect & Elect Engn, LUMINOUS Ctr Excellence Semicond Lighting & Displ, Singapore 639798, Singapore
2.South Univ Sci & Technol China, Dept Elect & Comp Engn, Shenzhen 518055, Guangdong, Peoples R China
3.Nanyang Technol Univ, Sch Phys & Math Sci, Singapore 639798, Singapore
4.Bilkent Univ, Dept Elect & Elect, Dept Phys, TR-06800 Ankara, Turkey
5.Bilkent Univ, UNAM Inst Mat Sci & Nanotechnol, TR-06800 Ankara, Turkey

Zhang, Zi-Hui,Tan, Swee Tiam,Kyaw, Zabu,et al. InGaN/GaN light-emitting diode with a polarization tunnel junction[J]. APPLIED PHYSICS LETTERS,2013,102(19).

Zhang, Zi-Hui.,Tan, Swee Tiam.,Kyaw, Zabu.,Ji, Yun.,Liu, Wei.,...&Demir, Hilmi Volkan.(2013).InGaN/GaN light-emitting diode with a polarization tunnel junction.APPLIED PHYSICS LETTERS,102(19).

Zhang, Zi-Hui,et al."InGaN/GaN light-emitting diode with a polarization tunnel junction".APPLIED PHYSICS LETTERS 102.19(2013).