Single domain Bi2Se3 films grown on InP(111)A by molecular-beam epitaxy

Guo, X.1; Xu, Z. J.1; Liu, H. C.2; Zhao, B.3; Dai, X. Q.3,4; He, H. T.2,5; Wang, J. N.2; Liu, H. J.1; Ho, W. K.1; Xie, M. H.1

2013-04-15

10.1063/1.4802797

APPLIED PHYSICS LETTERS   影响因子和分区

0003-6951

We report the growth of single-domain epitaxial Bi2Se3 films on InP(111)A substrate by molecular-beam epitaxy. Nucleation of Bi2Se3 proceeds at steps, so the lattices of the substrate play the guiding role for a unidirectional crystalline film in the step-flow growth mode. There exists a strong chemical interaction between atoms at the heterointerface, so the growth does not follow the van der Waals epitaxy process. A mounded morphology of thick Bi2Se3 epilayers suggests a growth kinetics dictated by the Ehrlich-Schwoebel barrier. The Schubnikov de Haas oscillations observed in magnetoresistance measurements are attributed to Landau quantization of the bulk states of electrons. (C) 2013 AIP Publishing LLC [http://dx.doi.org/10.1063/1.4802797]

SCI ; EI

英语

NI期刊

其他

Research Grant Council of Hong Kong Special Administrative Region[706110] ; Research Grant Council of Hong Kong Special Administrative Region[706111] ; Research Grant Council of Hong Kong Special Administrative Region[605011]

Physics

Physics, Applied

WOS:000318269200019

AMER INST PHYSICS

20131916320666

Growth kinetics ; III-V semiconductors ; Indium phosphide ; Molecular beam epitaxy ; Molecular beams ; Morphology ; Selenium compounds ; Semiconducting indium phosphide ; Van der Waals forces

Compound Semiconducting Materials:712.1.2 ; Inorganic Compounds:804.2 ; Atomic and Molecular Physics:931.3 ; Materials Science:951

PHYSICS

Web of Science

1.Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
2.Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
3.Henan Normal Univ, Coll Phys & Informat Engn, Xinxiang 453007, Henan, Peoples R China
4.Zhengzhou Normal Univ, Dept Phys, Zhengzhou 450044, Henan, Peoples R China
5.S Univ Sci & Technol China, Dept Phys, Shenzhen, Peoples R China

Guo, X.,Xu, Z. J.,Liu, H. C.,et al. Single domain Bi2Se3 films grown on InP(111)A by molecular-beam epitaxy[J]. APPLIED PHYSICS LETTERS,2013,102(15).

Guo, X..,Xu, Z. J..,Liu, H. C..,Zhao, B..,Dai, X. Q..,...&Xie, M. H..(2013).Single domain Bi2Se3 films grown on InP(111)A by molecular-beam epitaxy.APPLIED PHYSICS LETTERS,102(15).

Guo, X.,et al."Single domain Bi2Se3 films grown on InP(111)A by molecular-beam epitaxy".APPLIED PHYSICS LETTERS 102.15(2013).