Thickness-dependent evolutions of domain configuration and size in ferroelectric and ferroelectric-ferroelastic films

Huang, C. W.1; Chen, Z. H.1; Chen, Lang1,2

2013-03-07

10.1063/1.4794005

JOURNAL OF APPLIED PHYSICS   影响因子和分区

0021-8979

1089-7550

Non-monotonous thickness-dependent ferroelectric and ferroelectric-ferroelastic domain size scaling behaviors were revealed in ferroelectric films, including three distinct regions: (I) a classical 1/2 power law relationship for thick films, (II) a deviation from the 1/2 scaling relationship for an intermediate thickness range, and (III) an exponential increase in ultrathin films when decreasing the film thickness. The calculations indicate a much narrower region (II) in ferroelectric films with ferroelectric domains than that with ferroelectric-ferroelastic ones. As the film thickness decreases, the stable domain pattern also changes from a ferroelectric-ferroelastic domain to a ferroelectric one, which leads to the divergence of domain size scaling. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4794005]

SCI ; EI

英语

通讯

Physics

Physics, Applied

WOS:000316086500042

AMER INST PHYSICS

20131116117858

Ferroelectricity ; Film thickness ; Thick films ; Ultrathin films

Electricity: Basic Concepts and Phenomena:701.1 ; Dielectric Materials:708.1

PHYSICS

Web of Science

1.Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore
2.South Univ Sci & Technol China, Shenzhen 518055, Peoples R China

Huang, C. W.,Chen, Z. H.,Chen, Lang. Thickness-dependent evolutions of domain configuration and size in ferroelectric and ferroelectric-ferroelastic films[J]. JOURNAL OF APPLIED PHYSICS,2013,113(9).

Huang, C. W.,Chen, Z. H.,&Chen, Lang.(2013).Thickness-dependent evolutions of domain configuration and size in ferroelectric and ferroelectric-ferroelastic films.JOURNAL OF APPLIED PHYSICS,113(9).

Huang, C. W.,et al."Thickness-dependent evolutions of domain configuration and size in ferroelectric and ferroelectric-ferroelastic films".JOURNAL OF APPLIED PHYSICS 113.9(2013).