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题名

Dialkoxybithiazole: A New Building Block for Head-to-Head Polymer Semiconductors

作者
通讯作者Marks, Tobin J.
发表日期
2013-02-06
DOI
发表期刊
ISSN
0002-7863
EISSN
1520-5126
卷号135期号:5页码:1986-1996
摘要

Polymer semiconductors have received great attention for organic electronics due to the low fabrication cost offered by solution-based printing techniques. To enable the desired solubility/processability and carrier mobility, polymers are functionalized with hydrocarbon chains by strategically manipulating the alkylation patterns. Note that head-to-head (HH) linkages have traditionally been avoided because the induced backbone torsion leads to poor pi-pi overlap and amorphous film microstructures, and hence to low carrier mobilities. We report here the synthesis of a new building block for HH linkages, 4,4'-dialkoxy-5,5'-bithiazole (BTzOR), and its incorporation into polymers for high performance organic thin-film transistors. The small oxygen van der Waals radius and intramolecular S(thiazolyl)center dot center dot center dot O(alkoxy) attraction promote HH macromolecular architectures with extensive pi-conjugation, low bandgaps (1.40-1.63 eV), and high crystallinity. In comparison to previously reported 3,3'-dialkoxy-2,2'-bithiophene (BTOR), BTzOR is a promising building block in view of thiazole geometric and electronic properties: (a) replacing (thiophene)C-H with (thiazole)N reduces steric encumbrance in -BTzOR-Ar- dyads by eliminating repulsive C-H center dot center dot center dot H-C interactions with neighboring arene units, thereby enhancing pi-pi overlap and film crystallinity; and (b) thiazole electron-deficiency compensates alkoxy electron-donating characteristics, thereby lowering the BTzOR polymer HOMO versus that of the BTOR analogues. Thus, the new BTzOR polymers show substantial hole mobilities (0.06-0.25 cm(2)/(V s)) in organic thin-film transistors, as well as enhanced I-on:I-off ratios and greater ambient stability than the BTOR analogues. These geometric and electronic properties make BTzOR a promising building block for new classes of polymer semiconductors, and the synthetic route to BTzOR reported here should be adaptable to many other bithiazole-based building blocks.

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收录类别
SCI ; IC ; EI
语种
英语
重要成果
NI论文
学校署名
其他
资助项目
European Community's Seventh Framework Programme through a Marie Curie International Fellowship[234808]
WOS研究方向
Chemistry
WOS类目
Chemistry, Multidisciplinary
WOS记录号
WOS:000314794400055
出版者
EI入藏号
20130716012602
EI主题词
Amorphous Films ; Buildings ; Carrier Mobility ; Crystallinity ; Electronic Properties ; Macromolecules ; Organic Polymers ; Thin Film Circuits ; Thin Film Transistors ; Van Der Waals Forces
EI分类号
Buildings And Towers:402 ; Semiconducting Materials:712.1 ; Semiconductor Devices And Integrated Circuits:714.2 ; Physical Chemistry:801.4 ; Polymeric Materials:815.1 ; Organic Polymers:815.1.1 ; Amorphous Solids:933.2
来源库
Web of Science
引用统计
被引频次[WOS]:184
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/30378
专题理学院_化学系
作者单位
1.Northwestern Univ, Dept Chem, Evanston, IL 60208 USA
2.Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA
3.S Univ Sci & Technol China, Dept Chem, Shenzhen 518055, Guangdong, Peoples R China
4.Polyera Corp, Skokie, IL 60077 USA
5.Univ Malaga, Dept Phys Chem, E-29071 Malaga, Spain
第一作者单位化学系
推荐引用方式
GB/T 7714
Guo, Xugang,Quinn, Jordan,Chen, Zhihua,et al. Dialkoxybithiazole: A New Building Block for Head-to-Head Polymer Semiconductors[J]. Journal of the American Chemical Society,2013,135(5):1986-1996.
APA
Guo, Xugang.,Quinn, Jordan.,Chen, Zhihua.,Usta, Hakan.,Zheng, Yan.,...&Facchetti, Antonio.(2013).Dialkoxybithiazole: A New Building Block for Head-to-Head Polymer Semiconductors.Journal of the American Chemical Society,135(5),1986-1996.
MLA
Guo, Xugang,et al."Dialkoxybithiazole: A New Building Block for Head-to-Head Polymer Semiconductors".Journal of the American Chemical Society 135.5(2013):1986-1996.
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