GaN/MgO/ZnO heterojunction light-emitting diodes

Chen, Xinyi1; Ng, Alan M. C.1,2; Djurisic, Aleksandra B.1; Chan, Wai Kin3; Fong, P. W. K.4; Lui, H. F.4; Surya, C.4; Cheng, C. C. W.5; Kwok, W. M.5

2013-01

10.1016/j.tsf.2012.12.027

THIN SOLID FILMS   影响因子和分区

0040-6090

Light-emitting diodes (LEDs) based on p-GaN/ZnO heterojunction were fabricated. ZnO thin film deposited by electron-beam deposition and ZnO nanorods grown by electrodeposition were used as n-type materials. Devices with and without similar to 10 nm thick MgO interlayer between p-GaN and ZnO were prepared. The existence of MgO interlayer significantly affected LED performance compared to LEDs without MgO interlayer. In the photoluminescence measurements, p-GaN/MgO/ZnO nanorods exhibited stimulated emission under pulsed optical excitation, while no stimulated emission was observed in the absence of MgO. The effect of MgO interlayer on ZnO growth, optical and electrical properties, as well as the emission spectra of LEDs is discussed in detail. (C) 2012 Elsevier B. V. All rights reserved.

Zinc oxide Light-emitting diodes Electroluminescence Photoluminescence Electrodeposition

SCI ; EI

英语

其他

University of Hong Kong[]

Materials Science ; Physics

Materials Science, Multidisciplinary ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter

WOS:000314037200052

ELSEVIER SCIENCE SA

20130415940384

Diodes ; Electrodeposition ; Electrodes ; Electroluminescence ; Emission spectroscopy ; Gallium nitride ; Heterojunctions ; II-VI semiconductors ; III-V semiconductors ; Light ; Magnesia ; Nanorods ; Photoluminescence ; Stimulated emission ; Zinc oxide

Electroplating:539.3.1 ; Electromagnetic Waves:711 ; Semiconductor Devices and Integrated Circuits:714.2 ; Light, Optics and Optical Devices:741 ; Light/Optics:741.1 ; Nanotechnology:761 ; Inorganic Compounds:804.2 ; Solid State Physics:933

MATERIALS SCIENCE

Web of Science

1.Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
2.S Univ Sci & Technol China, Div Phys Sci, Nanostruct Inst Energy & Environm Res, Shenzhen, Peoples R China
3.Univ Hong Kong, Dept Chem, Hong Kong, Hong Kong, Peoples R China
4.Hong Kong Polytech Univ, Dept Elect & Informat Engn, Kowloon, Hong Kong, Peoples R China
5.Hong Kong Polytech Univ, Dept Appl Biol & Chem Technol, Kowloon, Hong Kong, Peoples R China

Chen, Xinyi,Ng, Alan M. C.,Djurisic, Aleksandra B.,et al. GaN/MgO/ZnO heterojunction light-emitting diodes[J]. THIN SOLID FILMS,2013,527:303-307.

Chen, Xinyi.,Ng, Alan M. C..,Djurisic, Aleksandra B..,Chan, Wai Kin.,Fong, P. W. K..,...&Kwok, W. M..(2013).GaN/MgO/ZnO heterojunction light-emitting diodes.THIN SOLID FILMS,527,303-307.

Chen, Xinyi,et al."GaN/MgO/ZnO heterojunction light-emitting diodes".THIN SOLID FILMS 527(2013):303-307.