A Self-Rectifying AlOy Bipolar RRAM With Sub-50-mu A Set/Reset Current for Cross-Bar Architecture

Tran, X. A.2; Zhu, W.2; Liu, W. J.2; Yeo, Y. C.3; Nguyen, B. Y.4; Yu, Hong Yu1

2012-10

10.1109/LED.2012.2210855

IEEE ELECTRON DEVICE LETTERS   影响因子和分区

0741-3106

1558-0563

In this letter, a bipolar resistive switching RAM based on Ni/AlOy/n(+)-Si which exhibits high potential to realize transistor-free operation for cross-bar array is successfully demonstrated. The proposed device shows well-behaved bipolar memory performance with self-rectifying behavior in low-resistance state (> 700 at 0.2 V), a high on/off resistance ratio (> 10(3)), a good retention characteristic (> 10(4) s at 100 degrees C), and a wide readout margin for cross-bar architecture (number of word line N > 2(5) for worst case condition).

Bipolar resistive random access memory (RRAM) resistive switching (RS) self-rectifying

SCI ; EI

英语

通讯

A*STAR[092 151 0086]

Engineering

Engineering, Electrical & Electronic

WOS:000309364600023

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

20124015502356

Memory architecture

Computer Systems and Equipment:722

ENGINEERING

Web of Science

1.S Univ Sci & Technol China, Shenzhen 518055, Peoples R China
2.Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
3.Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore
4.Soitec, F-38926 Crolles, France

Tran, X. A.,Zhu, W.,Liu, W. J.,et al. A Self-Rectifying AlOy Bipolar RRAM With Sub-50-mu A Set/Reset Current for Cross-Bar Architecture[J]. IEEE ELECTRON DEVICE LETTERS,2012,33(10):1402-1404.

Tran, X. A.,Zhu, W.,Liu, W. J.,Yeo, Y. C.,Nguyen, B. Y.,&Yu, Hong Yu.(2012).A Self-Rectifying AlOy Bipolar RRAM With Sub-50-mu A Set/Reset Current for Cross-Bar Architecture.IEEE ELECTRON DEVICE LETTERS,33(10),1402-1404.

Tran, X. A.,et al."A Self-Rectifying AlOy Bipolar RRAM With Sub-50-mu A Set/Reset Current for Cross-Bar Architecture".IEEE ELECTRON DEVICE LETTERS 33.10(2012):1402-1404.