南方科技大学知识苑(SUSTech KC): Vth Shift in Single-Layer Graphene Field-Effect Transistors and Its Correlation With Raman Inspection

题名	Vth Shift in Single-Layer Graphene Field-Effect Transistors and Its Correlation With Raman Inspection
作者	Liu, W. J.1; Sun, X. W.1; Tran, X. A.1; Fang, Z.1; Wang, Z. R.1; Wang, F.1; Wu, L.1; Zhang, J. F.2; Wei, J.3,4; Zhu, H. L.5; Yu, H. Y.6
通讯作者	Yu, H. Y.
发表日期	2012-06
DOI	10.1109/TDMR.2012.2190414
发表期刊	IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY 影响因子和分区
ISSN	1530-4388
EISSN	1558-2574
卷号	12 期号:2页码:478-481
摘要	Raman measurement is carried out to understand Vth shift in single-layer graphene field-effect transistors (GFETs). The G (2D) peak shift in Raman spectra is correlated to the corresponding Delta Vth during stress and recovery phases. A blue (red) shift of G and 2D peaks is seen during stress (recovery) phase, indicating the corresponding trapping (detrapping) effects in the graphene device. It is interesting to note that, after forming gas annealing (H-2/Ar), the defects can be generated in graphene (evidenced by D peak of Raman spectra), leading to the increased Delta Vth for both negative bias temperature instability and positive bias temperature instability in single-layer GFETs.
关键词	Graphene field-effect transistors (GFETs) negative bias temperature instability (NBTI) positive bias temperature instability (PBTI) Raman
相关链接	[来源记录]
收录类别	SCI ; EI
语种	英语
学校署名	通讯
资助项目	Nanyang Technological University ISNE[M58B3003]
WOS研究方向	Engineering ; Physics
WOS类目	Engineering, Electrical & Electronic ; Physics, Applied
WOS记录号	WOS:000305085100038
出版者	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
EI入藏号	20122415119342
EI主题词	Graphene ; Graphene transistors ; Negative bias temperature instability ; Negative temperature coefficient ; Raman scattering ; Stability ; Thermodynamic stability
EI分类号	Thermodynamics:641.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Light/Optics:741.1 ; Nanotechnology:761 ; Chemical Products Generally:804 ; Physical Properties of Gases, Liquids and Solids:931.2
ESI学科分类	ENGINEERING
来源库	Web of Science
引用统计	被引频次[WOS]：12
成果类型	期刊论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/30427
专题	南方科技大学工学院_深港微电子学院
作者单位	1.Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore 2.Liverpool John Moores Univ, Sch Engn, Liverpool L3 3AF, Merseyside, England 3.ASTAR, Singapore Inst Mfg Technol, Singapore 638075, Singapore 4.Tianjin Univ Technol, Tianjin 300191, Peoples R China 5.Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China 6.S Univ Sci & Technol China, Shenzhen 518055, Peoples R China
通讯作者单位	南方科技大学
推荐引用方式 GB/T 7714	Liu, W. J.,Sun, X. W.,Tran, X. A.,et al. Vth Shift in Single-Layer Graphene Field-Effect Transistors and Its Correlation With Raman Inspection[J]. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY,2012,12(2):478-481.
APA	Liu, W. J..,Sun, X. W..,Tran, X. A..,Fang, Z..,Wang, Z. R..,...&Yu, H. Y..(2012).Vth Shift in Single-Layer Graphene Field-Effect Transistors and Its Correlation With Raman Inspection.IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY,12(2),478-481.
MLA	Liu, W. J.,et al."Vth Shift in Single-Layer Graphene Field-Effect Transistors and Its Correlation With Raman Inspection".IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY 12.2(2012):478-481.