南方科技大学知识苑(SUSTech KC): A Self-Rectifying HfOx-Based Unipolar RRAM With NiSi Electrode

题名	A Self-Rectifying HfOx-Based Unipolar RRAM With NiSi Electrode
作者	Tran, X. A.1; Zhu, W. G.1; Gao, B.3; Kang, J. F.3; Liu, W. J.1; Fang, Z.1; Wang, Z. R.1; Yeo, Y. C.2; Nguyen, B. Y.4; Li, M. F.5; Yu, H. Y.6
通讯作者	Yu, H. Y.
发表日期	2012-04
DOI	10.1109/LED.2011.2181971
发表期刊	IEEE ELECTRON DEVICE LETTERS 影响因子和分区
ISSN	0741-3106
EISSN	1558-0563
卷号	33 期号:4页码:585-587
摘要	In this letter, a unipolar resistive switching random access memory (RAM) based on NiSi/HfOx/TiN structure is demonstrated, which is compatible with NiSi S/D in advance CMOS technology process. Highlights of the demonstrated resistive RAM include the following: 1) CMOS-technology-friendly materials and process; 2) excellent self-rectifying behavior in low-resistance state (> 10(3) at 1 V); 3) well-behaved memory performance, such as high on/off resistance ratio (> 10(2)) and good retention characteristics (> 10(5) s at 125 degrees C); and 4) wide readout margin for high-density cross-point memory devices (number of word lines > 10(6) for the worst case condition).
关键词	Resistive random access memory (RAM) (RRAM) resistive switching self-rectify unipolar
相关链接	[来源记录]
收录类别	SCI ; EI
语种	英语
学校署名	通讯
资助项目	A*STAR[092 151 0086]
WOS研究方向	Engineering
WOS类目	Engineering, Electrical & Electronic
WOS记录号	WOS:000302232900040
出版者	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
EI入藏号	20121414924680
EI主题词	CMOS integrated circuits ; Hafnium compounds ; Nickel compounds ; Silicon compounds ; Titanium compounds
EI分类号	Semiconductor Devices and Integrated Circuits:714.2
ESI学科分类	ENGINEERING
来源库	Web of Science
引用统计	被引频次[WOS]：23
成果类型	期刊论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/30431
专题	南方科技大学工学院_深港微电子学院
作者单位	1.Nanyang Technol Univ, Sch EEE, Singapore 639798, Singapore 2.Natl Univ Singapore, ECE Dept, Singapore 117576, Singapore 3.Peking Univ, Inst Microelect, Beijing 100871, Peoples R China 4.Soitec, F-38926 Bernin, Crolles, France 5.Fudan Univ, Dept Microelect, Shanghai 200433, Peoples R China 6.S Univ Sci & Technol China, Shenzhen 518055, Peoples R China
通讯作者单位	南方科技大学
推荐引用方式 GB/T 7714	Tran, X. A.,Zhu, W. G.,Gao, B.,et al. A Self-Rectifying HfOx-Based Unipolar RRAM With NiSi Electrode[J]. IEEE ELECTRON DEVICE LETTERS,2012,33(4):585-587.
APA	Tran, X. A..,Zhu, W. G..,Gao, B..,Kang, J. F..,Liu, W. J..,...&Yu, H. Y..(2012).A Self-Rectifying HfOx-Based Unipolar RRAM With NiSi Electrode.IEEE ELECTRON DEVICE LETTERS,33(4),585-587.
MLA	Tran, X. A.,et al."A Self-Rectifying HfOx-Based Unipolar RRAM With NiSi Electrode".IEEE ELECTRON DEVICE LETTERS 33.4(2012):585-587.