南方科技大学知识苑(SUSTech KC): Highly Uniform, Self-Compliance, and Forming-Free ALD HfO2-Based RRAM With Ge Doping

题名	Highly Uniform, Self-Compliance, and Forming-Free ALD HfO2-Based RRAM With Ge Doping
作者	Wang, Zhongrui 1; Zhu, W. G.1; Du, A. Y.2; Wu, L.1; Fang, Z.1; Tran, X. A.1; Liu, W. J.1; Zhang, K. L.3; Yu, H. -Y.4
通讯作者	Yu, H. -Y.
发表日期	2012-04
DOI	10.1109/TED.2012.2182770
发表期刊	IEEE TRANSACTIONS ON ELECTRON DEVICES 影响因子和分区
ISSN	0018-9383
EISSN	1557-9646
卷号	59 期号:4页码:1203-1208
摘要	Atomic layer deposited (ALD) HfO2 resistive-switching random access memory devices with high uniformity, self-compliance, and forming-free behavior are demonstrated. Through comparative experiments, we find that appropriate deposition techniques and annealing conditions lead to self-compliance. The forming-free behavior originates from the oxygen deficiency due to the metal doping layer. High uniformity, by first-principle calculation, is caused by Ge doping in the HfO2, which lowers the oxygen-vacancy formation energy.
关键词	Atomic layer deposition (ALD) HfO2 resistive-switching random access memory (RRAM) resistive switching
相关链接	[来源记录]
收录类别	SCI ; EI
语种	英语
学校署名	通讯
资助项目	Agency for Science, Technology, and Research (A*STAR) of Singapore under the SERC[102-101-0019]
WOS研究方向	Engineering ; Physics
WOS类目	Engineering, Electrical & Electronic ; Physics, Applied
WOS记录号	WOS:000302083800045
出版者	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
EI入藏号	20121414924478
EI主题词	Germanium ; Hafnium oxides ; Oxygen ; RRAM
EI分类号	Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Chemical Products Generally:804 ; Coating Techniques:813.1
ESI学科分类	ENGINEERING
来源库	Web of Science
引用统计	被引频次[WOS]：81
成果类型	期刊论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/30432
专题	南方科技大学工学院_深港微电子学院
作者单位	1.Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore 2.GLOBALFOUNDARIES, Singapore 738406, Singapore 3.Tianjin Univ Technol, Tianjin 300191, Peoples R China 4.S Univ Sci & Technol China, Shenzhen 518055, Peoples R China
通讯作者单位	南方科技大学
推荐引用方式 GB/T 7714	Wang, Zhongrui,Zhu, W. G.,Du, A. Y.,et al. Highly Uniform, Self-Compliance, and Forming-Free ALD HfO2-Based RRAM With Ge Doping[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2012,59(4):1203-1208.
APA	Wang, Zhongrui.,Zhu, W. G..,Du, A. Y..,Wu, L..,Fang, Z..,...&Yu, H. -Y..(2012).Highly Uniform, Self-Compliance, and Forming-Free ALD HfO2-Based RRAM With Ge Doping.IEEE TRANSACTIONS ON ELECTRON DEVICES,59(4),1203-1208.
MLA	Wang, Zhongrui,et al."Highly Uniform, Self-Compliance, and Forming-Free ALD HfO2-Based RRAM With Ge Doping".IEEE TRANSACTIONS ON ELECTRON DEVICES 59.4(2012):1203-1208.