南方科技大学知识苑(SUSTech KC): Positive Bias-Induced V-th Instability in Graphene Field Effect Transistors

题名	Positive Bias-Induced V-th Instability in Graphene Field Effect Transistors
作者	Liu, W. J.1; Sun, X. W.1; Fang, Z.1; Wang, Z. R.1; Tran, X. A.1; Wang, F.1; Wu, L.1; Ng, G. I.1; Zhang, J. F.2; Wei, J.3; Zhu, H. L.4; Yu, H. Y.5
通讯作者	Yu, H. Y.
发表日期	2012-03
DOI	10.1109/LED.2011.2181150
发表期刊	IEEE ELECTRON DEVICE LETTERS 影响因子和分区
ISSN	0741-3106
EISSN	1558-0563
卷号	33 期号:3页码:339-341
摘要	In this letter, we report positive bias-induced V-th instability in single- and multilayer graphene field effect transistors (GFETs) with back-gate SiO2 dielectric. The Delta V-th of GFETs increases as stressing time and voltage increases, and tends to saturate after long stressing time. In the meanwhile, it does not show much dependence on gate length, width, and the number of graphene layers. The 1/f noise measurement indicates no newly generated traps in SiO2/graphene interface caused by positive bias stressing. Mobility is seen to degrade with temperature increasing. The degradation is believed to be caused by the trapped electrons in bulk SiO2 or SiO2/graphene interface and trap generation in bulk SiO2.
关键词	Graphene field effect transistors (GFETs) reliability 1/f
相关链接	[来源记录]
收录类别	SCI ; EI
语种	英语
学校署名	通讯
资助项目	Nanyang Technological University ISNE[M58B3003]
WOS研究方向	Engineering
WOS类目	Engineering, Electrical & Electronic
WOS记录号	WOS:000300580000013
出版者	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
EI入藏号	20120914817324
EI主题词	Graphene ; Graphene transistors ; Low-k dielectric ; Reliability ; Silica
EI分类号	Semiconductor Devices and Integrated Circuits:714.2 ; Nanotechnology:761 ; Chemical Products Generally:804
ESI学科分类	ENGINEERING
来源库	Web of Science
引用统计	被引频次[WOS]：15
成果类型	期刊论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/30435
专题	南方科技大学工学院_深港微电子学院
作者单位	1.Nanyang Technol Univ, Sch EEE, Singapore 639798, Singapore 2.Liverpool John Moores Univ, Sch Engn, Liverpool L3 3AF, Merseyside, England 3.ASTAR, Singapore Inst Mfg Technol, Singapore 638075, Singapore 4.Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China 5.S Univ Sci & Technol China, Shenzhen 518055, Peoples R China
通讯作者单位	南方科技大学
推荐引用方式 GB/T 7714	Liu, W. J.,Sun, X. W.,Fang, Z.,et al. Positive Bias-Induced V-th Instability in Graphene Field Effect Transistors[J]. IEEE ELECTRON DEVICE LETTERS,2012,33(3):339-341.
APA	Liu, W. J..,Sun, X. W..,Fang, Z..,Wang, Z. R..,Tran, X. A..,...&Yu, H. Y..(2012).Positive Bias-Induced V-th Instability in Graphene Field Effect Transistors.IEEE ELECTRON DEVICE LETTERS,33(3),339-341.
MLA	Liu, W. J.,et al."Positive Bias-Induced V-th Instability in Graphene Field Effect Transistors".IEEE ELECTRON DEVICE LETTERS 33.3(2012):339-341.