Mechanism of Different Switching Directions in Graphene Oxide Based RRAM

Wang, Zhongrui1; Tjoa, V.2; Wu, L.1; Liu, W. J.1,3; Fang, Z.1; Tran, X. A.1; Wei, J.2; Zhu, W. G.1; Yu, H. Y.4

2012

10.1149/2.068206jes

JOURNAL OF THE ELECTROCHEMICAL SOCIETY   影响因子和分区

0013-4651

1945-7111

Resistive switching in Graphene Oxide (GO) based RRAM has been studied in combination with various commonly used electrodes e.g. Al, Cu, Ni and Ti. For the first time, coexistence of different reproducible switching directions has been observed in the Al/GO/Pt and the Ti/GO/Pt RRAM cells. These switching directions are correlated to the underlying switching mechanisms as revealed by field dependence, temperature dependence and area dependence. Our observation also suggests that both oxygen related functional groups absorption/release and electrode metal ions diffusion play important roles in bipolar resistive switching of GO.

SCI ; EI

英语

通讯

Electrochemistry ; Materials Science

Electrochemistry ; Materials Science, Coatings & Films

WOS:000304140700089

ELECTROCHEMICAL SOC INC

20122215061472

Electrodes ; Graphene ; Metal ions ; Metals ; RRAM ; Temperature distribution ; Titanium oxides

Metallurgy:531.1 ; Thermodynamics:641.1 ; Nanotechnology:761 ; Chemical Products Generally:804 ; Inorganic Compounds:804.2

CHEMISTRY

Web of Science

1.Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
2.ASTAR, Singapore Inst Mfg Technol, Singapore 638075, Singapore
3.Tianjin Univ Technol, Sch Elect Informat Engn, Tianjin Key Lab Film Elect & Commun Devices, Tianjin 300384, Peoples R China
4.S Univ Sci & Technol China, Guangzhou 518055, Guangdong, Peoples R China

Wang, Zhongrui,Tjoa, V.,Wu, L.,et al. Mechanism of Different Switching Directions in Graphene Oxide Based RRAM[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY,2012,159(6):K177-K182.

Wang, Zhongrui.,Tjoa, V..,Wu, L..,Liu, W. J..,Fang, Z..,...&Yu, H. Y..(2012).Mechanism of Different Switching Directions in Graphene Oxide Based RRAM.JOURNAL OF THE ELECTROCHEMICAL SOCIETY,159(6),K177-K182.

Wang, Zhongrui,et al."Mechanism of Different Switching Directions in Graphene Oxide Based RRAM".JOURNAL OF THE ELECTROCHEMICAL SOCIETY 159.6(2012):K177-K182.