| 题名 | Patterning of quantum dot light-emitting diodes based on IGZO films |
| 作者 | |
| 通讯作者 | Liu, Pai; Xu, Wenwei; Sun, Xiao Wei |
| 发表日期 | 2022-03-01
|
| DOI | |
| 发表期刊 | |
| ISSN | 1071-0922
|
| EISSN | 1938-3657
|
| 卷号 | 30期号:7页码:585-592 |
| 摘要 | The patterning of quantum dot light-emitting diodes (QLED) is essential for QLED in the display application. In the work, we studied patterning thin film to form IGZO electron transport layers for QLED. Making use of a staggered IGZO film as the electron transport layer, we studied QLED degradation and observed luminance inversion, which is due to the non-uniform current spreading effect caused by the staggered IGZO film. The current crowding at the thinner film area (with lower electric resistance) leads to a patterned emission of the device but also a faster device degradation at the same time. |
| 关键词 | |
| 相关链接 | [来源记录] |
| 收录类别 | |
| 语种 | 英语
|
| 学校署名 | 第一
; 通讯
|
| 资助项目 | Science and Technology of China[
|
| WOS研究方向 | Engineering
; Materials Science
; Optics
; Physics
|
| WOS类目 | Engineering, Electrical & Electronic
; Materials Science, Multidisciplinary
; Optics
; Physics, Applied
|
| WOS记录号 | WOS:000765630600001
|
| 出版者 | |
| EI入藏号 | 20221111789873
|
| EI主题词 | Electron transport properties
; Nanocrystals
; Semiconducting indium compounds
; Semiconductor quantum dots
; Thin films
|
| EI分类号 | Compound Semiconducting Materials:712.1.2
; Semiconductor Devices and Integrated Circuits:714.2
; Nanotechnology:761
; Crystalline Solids:933.1
|
| 来源库 | Web of Science
|
| 引用统计 |
被引频次[WOS]：1
|
| 成果类型 | 期刊论文 |
| 条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/308544 |
| 专题 | 工学院_电子与电气工程系 |
| 作者单位 | 1.Southern Univ Sci & Technol, Minist Educ, Key Lab Energy Convers & Storage Technol, Shenzhen, Peoples R China 2.Southern Univ Sci & Technol, Guangdong Hong Kong Macao Joint, Lab Photon Thermal Elect Energy Mat & Devices, Shenzhen Key Lab Adv Quantum Dot Displays & Light, Shenzhen, Peoples R China 3.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China 4.Southern Univ Sci & Technol, SUSTech HUAWEI Joint Lab Photon Ind, Shenzhen, Peoples R China 5.Shenzhen Planck Innovat Technol Co Ltd, Shenzhen, Peoples R China 6.Huawei Technol Co Ltd, Inst Strateg Res, Shenzhen, Peoples R China |
| 第一作者单位 | 南方科技大学; 电子与电气工程系 |
| 通讯作者单位 | 南方科技大学; 电子与电气工程系 |
| 第一作者的第一单位 | 南方科技大学 |
| 推荐引用方式 GB/T 7714 |
Ma, Jingrui,Jia, Siqi,Qu, Xiangwei,et al. Patterning of quantum dot light-emitting diodes based on IGZO films[J]. Journal of the Society for Information Display,2022,30(7):585-592.
|
| APA |
Ma, Jingrui.,Jia, Siqi.,Qu, Xiangwei.,Tang, Haodong.,Xu, Bing.,...&Sun, Xiao Wei.(2022).Patterning of quantum dot light-emitting diodes based on IGZO films.Journal of the Society for Information Display,30(7),585-592.
|
| MLA |
Ma, Jingrui,et al."Patterning of quantum dot light-emitting diodes based on IGZO films".Journal of the Society for Information Display 30.7(2022):585-592.
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| 条目包含的文件 | ||||||
| 文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | 操作 | |
| J Soc Info Display -（1838KB） | -- | -- | 限制开放 | -- | ||
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