| 题名 | Ultra-bright green InGaN micro-LEDs with brightness over 10M nits |
| 作者 | |
| 通讯作者 | Liu, Zhaojun |
| 发表日期 | 2022-03-14
|
| DOI | |
| 发表期刊 | |
| ISSN | 1094-4087
|
| 卷号 | 30期号:6页码:10119-10125 |
| 摘要 | An investigation of electrical and optical properties of InGaN micro-scale light-emitting diodes (micro-LEDs) emitting at similar to 530 nm is carried out, with sizes of 80, 150, and 200 mu m. The ITO as a current spreading layer (CSL) provides excellent device performance. Over 10% external quantum efficiency (EQE) and wall-plug efficiency (WPE), and ultra-high brightness (> 10M nits) green micro-LEDs are realized. In addition, it is observed that better current spreading in smaller devices results in higher EQE and brightness. Superior green micro-LEDs can provide an essential guarantee for a variety of applications. (C) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement |
| 相关链接 | [来源记录] |
| 收录类别 | |
| 语种 | 英语
|
| 学校署名 | 第一
; 通讯
|
| 资助项目 | Science and Technology Planning Project of Shenzhen Municipality[KQTD20170810110313773]
; High-level University Fund[G02236005]
|
| WOS研究方向 | Optics
|
| WOS类目 | Optics
|
| WOS记录号 | WOS:000768611900011
|
| 出版者 | |
| EI入藏号 | 20221211827715
|
| EI主题词 | Efficiency
; Gallium alloys
; III-V semiconductors
; Indium alloys
; Light emitting diodes
; Semiconductor alloys
|
| EI分类号 | Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3
; Semiconducting Materials:712.1
; Semiconductor Devices and Integrated Circuits:714.2
; Production Engineering:913.1
|
| ESI学科分类 | PHYSICS
|
| 来源库 | Web of Science
|
| 引用统计 |
被引频次[WOS]：14
|
| 成果类型 | 期刊论文 |
| 条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/313160 |
| 专题 | 工学院_电子与电气工程系 |
| 作者单位 | Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China |
| 第一作者单位 | 电子与电气工程系 |
| 通讯作者单位 | 电子与电气工程系 |
| 第一作者的第一单位 | 电子与电气工程系 |
| 推荐引用方式 GB/T 7714 |
Zhanghu, Mengyuan,Hyun, Byung-Ryool,Jiang, Fulong,et al. Ultra-bright green InGaN micro-LEDs with brightness over 10M nits[J]. OPTICS EXPRESS,2022,30(6):10119-10125.
|
| APA |
Zhanghu, Mengyuan,Hyun, Byung-Ryool,Jiang, Fulong,&Liu, Zhaojun.(2022).Ultra-bright green InGaN micro-LEDs with brightness over 10M nits.OPTICS EXPRESS,30(6),10119-10125.
|
| MLA |
Zhanghu, Mengyuan,et al."Ultra-bright green InGaN micro-LEDs with brightness over 10M nits".OPTICS EXPRESS 30.6(2022):10119-10125.
|
| 条目包含的文件 | 条目无相关文件。 | |||||
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