p-GaN Gate HEMTs With 10.6 V Maximum Gate Drive Voltages by Mg Doping Engineering

Zhou, Guangnan1,2; Zeng, Fanming3,4; Gao, Rongyu3,4; Wang, Qing3,4; Cheng, Kai5; Li, Lingqi3,4; Xiang, Peng5; Du, Fangzhou3,4; Xia, Guangrui2; Yu, Hongyu3,4

2022-05

10.1109/TED.2022.3157569

IEEE Transactions on Electron Devices   影响因子和分区

1557-9646

Doping engineering gate reliability p-gallium nitride (GaN) gate HEMT time-dependent gate breakdown (TDGB)

SCI ; EI

第一 ; 通讯

WOS:000770588000001

20221211832332

Aluminum gallium nitride ; Failure analysis ; Gallium nitride ; High electron mobility transistors ; Hole concentration ; III-V semiconductors ; Leakage currents ; Magnesium ; Metallorganic chemical vapor deposition ; Organic chemicals ; Organometallics ; Secondary ion mass spectrometry ; Temperature measurement ; Threshold voltage

Magnesium and Alloys:542.2 ; Alkaline Earth Metals:549.2 ; Electricity: Basic Concepts and Phenomena:701.1 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Chemical Reactions:802.2 ; Organic Compounds:804.1 ; Inorganic Compounds:804.2 ; Temperature Measurements:944.6

ENGINEERING

IEEE

1.Southern Univ Sci & Technol SUSTech, Sch Microelect, Shenzhen 518055, Guangdong, Peoples R China
2.Univ British Columbia UBC, Dept Mat Engn, Vancouver, BC V6T 1Z4, Canada
3.Southern Univ Sci & Technol SUSTech, Engn Res Ctr Integrated Circuits Next Generat Com, Shenzhen Inst Wide Bandgap Semicond, Minist Educ,Sch Microelect, Shenzhen 518055, Guangdong, Peoples R China
4.Southern Univ Sci & Technol SUSTech, GaN Device Engn Technol Res Ctr Guangdong, Shenzhen 518055, Guangdong, Peoples R China
5.Enkris Semicond Inc, Suzhou 215123, Peoples R China

Zhou, Guangnan,Zeng, Fanming,Gao, Rongyu,et al. p-GaN Gate HEMTs With 10.6 V Maximum Gate Drive Voltages by Mg Doping Engineering[J]. IEEE Transactions on Electron Devices,2022,69(5):2282-2286.

Zhou, Guangnan.,Zeng, Fanming.,Gao, Rongyu.,Wang, Qing.,Cheng, Kai.,...&Yu, Hongyu.(2022).p-GaN Gate HEMTs With 10.6 V Maximum Gate Drive Voltages by Mg Doping Engineering.IEEE Transactions on Electron Devices,69(5),2282-2286.

Zhou, Guangnan,et al."p-GaN Gate HEMTs With 10.6 V Maximum Gate Drive Voltages by Mg Doping Engineering".IEEE Transactions on Electron Devices 69.5(2022):2282-2286.