Dative Epitaxy of Commensurate Monocrystalline Covalent van der Waals Moire Supercrystal

Bian, Mengying1,2; Zhu, Liang3,4; Wang, Xiao5; Choi, Junho6; Chopdekar, Rajesh, V7; Wei, Sichen8; Wu, Lishu9; Huai, Chang2; Marga, Austin2; Yang, Qishuo3,4; Li, Yuguang C.10; Yao, Fei8; Yu, Ting9; Crooker, Scott A.6; Cheng, Xuemei M.5; Sabirianov, Renat F.11; Zhang, Shengbai12; Lin, Junhao3,4; Hou, Yanglong1; Zeng, Hao2

2022-03-01

10.1002/adma.202200117

ADVANCED MATERIALS   影响因子和分区

0935-9648

1521-4095

Realizing van der Waals (vdW) epitaxy in the 1980s represents a breakthrough that circumvents the stringent lattice matching and processing compatibility requirements in conventional covalent heteroepitaxy. However, due to the weak vdW interactions, there is little control over film qualities by the substrate. Typically, discrete domains with a spread of misorientation angles are formed, limiting the applicability of vdW epitaxy. Here, the epitaxial growth of monocrystalline, covalent Cr5Te8 2D crystals on monolayer vdW WSe2 by chemical vapor deposition is reported, driven by interfacial dative bond formation. The lattice of Cr5Te8, with a lateral dimension of a few tens of micrometers, is fully commensurate with that of WSe2 via 3 x 3 (Cr5Te8)/7 x 7 (WSe2) supercell matching, forming a single-crystalline moire superlattice. This work establishes a conceptually distinct paradigm of thin-film epitaxy, termed "dative epitaxy", which takes full advantage of covalent epitaxy with chemical bonding for fixing the atomic registry and crystal orientation, while circumventing its stringent lattice matching and processing compatibility requirements; conversely, it ensures the full flexibility of vdW epitaxy, while avoiding its poor orientation control. Cr5Te8 2D crystals grown by dative epitaxy exhibit square magnetic hysteresis, suggesting minimized interfacial defects that can serve as pinning sites.

commensurate lattices dative bonds epitaxy moire superlattices van der Waals interaction

SCI ; EI

英语

NI论文

通讯

US National Science Foundation["ECCS-2042085","MRI-1229208","MRI-1726303","CBET-1510121","DMR-1708790"] ; National Key R&D Program of China[2017YFA0206301] ; National Natural Science Foundation of China[52027801,51631001,52101280,11974156] ; China-German Collaboration Project[M-0199] ; China Postdoctoral Science Foundation[2020M670042] ; Guangdong International Science Collaboration Project[2019A050510001] ; Science, Technology and Innovation Commission of Shenzhen Municipality[ZDSYS20190902092905285] ; National Science Foundation[DMR-1644779] ; NSF-DMREF[1729288] ; [NSF ECCS-2042126]

Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics

Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter

WOS:000771354700001

WILEY-V C H VERLAG GMBH

20221311836285

Chemical bonds ; Chemical vapor deposition ; Chromium compounds ; Crystal orientation ; Quality control ; Selenium compounds ; Tellurium compounds ; Thin films

Physical Chemistry:801.4 ; Chemical Reactions:802.2 ; Quality Assurance and Control:913.3 ; Atomic and Molecular Physics:931.3 ; Crystal Lattice:933.1.1

MATERIALS SCIENCE

Web of Science

1.Peking Univ, Beijing Key Lab Magnetoelect Mat & Devices, Beijing Innovat Ctr Engn Sci & Adv Technol, Sch Mat Sci & Engn, Beijing 100871, Peoples R China
2.Univ Buffalo State Univ New York, Dept Phys, Buffalo, NY 14260 USA
3.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China
4.Southern Univ Sci & Technol, Shenzhen Key Lab Adv Quantum Funct Mat & Devices, Shenzhen 518055, Peoples R China
5.Bryn Mawr Coll, Phys Dept, Bryn Mawr, PA 19010 USA
6.Los Alamos Natl Lab, Natl High Magnet Field Lab, Los Alamos, NM 87545 USA
7.Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA
8.Univ Buffalo State Univ New York, Dept Mat Design & Innovat, Buffalo, NY 14260 USA
9.Nanyang Technol Univ, Div Phys & Appl Phys, Sch Phys & Math Sci, Singapore 637371, Singapore
10.Univ Buffalo State Univ New York, Dept Chem, Buffalo, NY 14260 USA
11.Univ Nebraska, Dept Phys, Omaha, NE 68182 USA
12.Rensselaer Polytech Inst, Dept Phys, Troy, NY 12180 USA

Bian, Mengying,Zhu, Liang,Wang, Xiao,et al. Dative Epitaxy of Commensurate Monocrystalline Covalent van der Waals Moire Supercrystal[J]. ADVANCED MATERIALS,2022,34.

Bian, Mengying.,Zhu, Liang.,Wang, Xiao.,Choi, Junho.,Chopdekar, Rajesh, V.,...&Zeng, Hao.(2022).Dative Epitaxy of Commensurate Monocrystalline Covalent van der Waals Moire Supercrystal.ADVANCED MATERIALS,34.

Bian, Mengying,et al."Dative Epitaxy of Commensurate Monocrystalline Covalent van der Waals Moire Supercrystal".ADVANCED MATERIALS 34(2022).