Deep UV transparent conductive oxide thin films realized through degenerately doped wide-bandgap gallium oxide

Zhang，Jiaye1,2; Willis，Joe3,4,5; Yang，Zhenni1; Lian，Xu6; Chen，Wei6; Wang，Lai Sen7; Xu，Xiangyu1; Lee，Tien Lin5; Chen，Lang2; Scanlon，David O.3,4; Zhang，Kelvin H.L.1

2022-03-16

10.1016/j.xcrp.2022.100801

Cell Reports Physical Science   影响因子和分区

2666-3864

Deep UV transparent thin films have recently attracted considerable attention owing to their potential in UV and organic-based optoelectronics. Here, we report the achievement of a deep UV transparent and highly conductive thin film based on Si-doped GaO (SGO) with high conductivity of 2500 S/cm. The SGO thin films exhibit high transparency over a wide spectrum ranging from visible light to deep UV wavelength and, meanwhile, have a very low work-function of approximately 3.2 eV. A combination of photoemission spectroscopy and theoretical studies reveals that the delocalized conduction band derived from Ga 4s orbitals is responsible for the GaO films’ high conductivity. Furthermore, Si is shown to act as an efficient shallow donor, yielding high mobility up to approximately 60 cm/Vs. The superior optoelectronic properties of SGO films make it a promising material for use as electrodes in high-power electronics and deep UV and organic-based optoelectronic devices.

electronic structure Ga2O3 transparent conducting oxide wide-bandgap semiconductor work-function

SCI

英语

通讯

National Natural Science Foundation of China[21872116];National Natural Science Foundation of China[22075232];National Natural Science Foundation of China[51771157];National Natural Science Foundation of China[51972160];Engineering and Physical Sciences Research Council[EP/N01572X/1];Ministry of Education - Singapore[MOE-000150-00];

Chemistry ; Energy & Fuels ; Materials Science ; Physics

Chemistry, Multidisciplinary ; Energy & Fuels ; Materials Science, Multidisciplinary ; Physics, Multidisciplinary

WOS:000802231400008

ELSEVIER

2-s2.0-85126354271

Scopus

1.State Key Laboratory of Physical Chemistry of Solid Surfaces,College of Chemistry and Chemical Engineering,Xiamen University,Xiamen,361005,China
2.Department of Physics,Southern University of Science and Technology,Shenzhen,Guangdong,518055,China
3.Department of Chemistry,University College London,London,20 Gordon Street, UK,WC1H 0AJ,United Kingdom
4.Thomas Young Centre,University College London,London,Gower Street, UK,WC1E 6BT,United Kingdom
5.Diamond Light Source Ltd.,Harwell Science and Innovation Campus,Didcot,UK,OX11 0DE,United Kingdom
6.Department of Chemistry,National University of Singapore,Singapore,117543,Singapore
7.Fujian Key Laboratory of Materials Genome,College of Materials,Xiamen University,Xiamen,361005,China

Zhang，Jiaye,Willis，Joe,Yang，Zhenni,et al. Deep UV transparent conductive oxide thin films realized through degenerately doped wide-bandgap gallium oxide[J]. Cell Reports Physical Science,2022,3(3).

Zhang，Jiaye.,Willis，Joe.,Yang，Zhenni.,Lian，Xu.,Chen，Wei.,...&Zhang，Kelvin H.L..(2022).Deep UV transparent conductive oxide thin films realized through degenerately doped wide-bandgap gallium oxide.Cell Reports Physical Science,3(3).

Zhang，Jiaye,et al."Deep UV transparent conductive oxide thin films realized through degenerately doped wide-bandgap gallium oxide".Cell Reports Physical Science 3.3(2022).