中文版 | English
题名

Monitoring the Material Quality of Two-Dimensional Transition Metal Dichalcogenides

作者
通讯作者Du,Lena; Zhao,Yun; Liu,Kaihui
发表日期
2022-03-03
DOI
发表期刊
ISSN
1932-7447
EISSN
1932-7455
卷号126期号:8页码:3797-3810
摘要
Two-dimensional (2D) transition metal dichalcogenides (TMDs), with atomic thickness, strong spin-orbit coupling, enhanced light-matter interactions. and facile quantum control ability, have demonstrated great potential in the applications of nanoelectronics and optoelectronics. The realization of these high-performance applications strongly relies on the production of large-scale TMD films with high quality. Therefore, facile and accurate quality monitoring of TMDs is essential for their future applications. In this Review, we summarized the main defect types in TMD crystals obtained by different synthesis methods, and we discussed recent cutting-edge characterization techniques, including scanning transmission electron microscopy, etching or adsorption, optical spectroscopy, and field-effect transistors. Finally, we provide a short perspective on the future development of quality monitoring techniques for broad 2D materials.
相关链接[Scopus记录]
收录类别
SCI ; EI
语种
英语
学校署名
通讯
资助项目
Key R&D Program of Guangdong Province["2019B010931001","2020B010189001","2018B030327001"] ; National Natural Science Foundation of China[92163206,52025023,51991342,52021006,51991344,52100115,11888101] ; China Postdoctoral Science Foundation[2021T140022] ; Strategic Priority Research Program of the Chinese Academy of Sciences[XDB33000000] ; Beijing Natural Science Foundation[JQ19004] ; Pearl River Talent Recruitment Program of Guangdong Province[2019ZT08C321]
WOS研究方向
Chemistry ; Science & Technology - Other Topics ; Materials Science
WOS类目
Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号
WOS:000773651500001
出版者
EI入藏号
20220911729750
EI主题词
Etching ; Field effect transistors ; High resolution transmission electron microscopy ; Scanning electron microscopy
EI分类号
Metallurgy and Metallography:531 ; Semiconductor Devices and Integrated Circuits:714.2 ; Optical Devices and Systems:741.3 ; Chemical Reactions:802.2
Scopus记录号
2-s2.0-85125411568
来源库
Scopus
引用统计
被引频次[WOS]:5
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/327685
专题理学院_物理系
量子科学与工程研究院
作者单位
1.School of Chemistry and Chemical Engineering,Beijing Institute of Technology,Beijing,102488,China
2.State Key Laboratory for Mesoscopic Physics,Frontiers Science Centre for Nano-optoelectronics,School of Physics,Peking University,Beijing,100871,China
3.Songshan Lake Materials Laboratory,Institute of Physics,Chinese Academy of Sciences,Dongguan,523808,China
4.Shenzhen Institute for Quantum Science and Engineering,and Department of Physics,Southern University of Science and Technology,Shenzhen,518055,China
5.Department of Physics,Capital Normal University,Beijing,100037,China
通讯作者单位物理系;  量子科学与工程研究院
推荐引用方式
GB/T 7714
Wang,Jinhuan,Huang,Chen,You,Yilong,et al. Monitoring the Material Quality of Two-Dimensional Transition Metal Dichalcogenides[J]. Journal of Physical Chemistry C,2022,126(8):3797-3810.
APA
Wang,Jinhuan.,Huang,Chen.,You,Yilong.,Guo,Quanlin.,Xue,Guodong.,...&Liu,Kaihui.(2022).Monitoring the Material Quality of Two-Dimensional Transition Metal Dichalcogenides.Journal of Physical Chemistry C,126(8),3797-3810.
MLA
Wang,Jinhuan,et al."Monitoring the Material Quality of Two-Dimensional Transition Metal Dichalcogenides".Journal of Physical Chemistry C 126.8(2022):3797-3810.
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