Evolution of the Interfacial Layer and Its Impact on Electric-Field-Cycling Behaviors in Ferroelectric Hf1- xZrxO2

Zhang，Fan1,2; Luo，Zheng Dong1; Yang，Qiyu1; Zhou，Jiuren3; Wang，Jin4; Zhang，Zhaohao2; Fan，Qikui4; Peng，Yue1; Wu，Zhenhua2; Liu，Fei6; Chen，Shiyou7; He，Dongsheng5; Yin，Huaxiang2; Han，Genquan1; Liu，Yan1,8; Hao，Yue1

2022-03-02

10.1021/acsami.1c22426

ACS Applied Materials & Interfaces   影响因子和分区

1944-8244

1944-8252

Doped HfOthin films, which exhibit robust ferroelectricity even with aggressive thickness scaling, could potentially enable ultralow-power logic and memory devices. The ferroelectric properties of such materials are strongly intertwined with the voltage-cycling-induced electrical and structural changes, leading to wake-up and fatigue effects. Such field-cycling-dependent behaviors are crucial to evaluate the reliability of HfO-based functional devices; however, its genuine nature remains elusive. Herein, we demonstrate the coupling mechanism between the dynamic change of the interfacial layer and wake-up/fatigue phenomena in ferroelectric HfZrO(HZO) thin films. Comprehensive atomic-resolution microscopy studies have revealed that the interfacial layer between the HZO and neighboring nonoxide electrode experienced a thickness/composition evolution during electrical cycling. Two theoretical models associated with the depolarization field are adopted, giving consistent results with the thickening of the interfacial layer during electrical cycling. Furthermore, we found that the electrical properties of the HZO devices can be manipulated by controlling the interface properties, e.g., through the choice of electrode match and hybrid cycling process. Our results unambiguously reveal the relationship between the interfacial layer and field-cycling behaviors in HZO, which would further permit the reliability improvement in HZO-based ferroelectric devices through interface engineering.

fatigue ferroelectric HZO interfacial layer wake-up

SCI ; EI

英语

其他

National Key Research and Development Project[2018YFB2202800] ; National Natural Science Foundation of China[62025402,62090033,91964202,92064003,61874081,61851406,62004149,62004145,61904194] ; Major Scientific Research Project of Zhejiang Lab[2021MD0AC01] ; Science and Technology Program of Beijing Municipal Science and Technology Commission[Z201100006820084]

Science & Technology - Other Topics ; Materials Science

Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary

WOS:000757860300001

AMER CHEMICAL SOC

20220811699628

Electric fields ; Electrodes ; Fatigue of materials ; Ferroelectric devices ; Ferroelectric thin films ; Hafnium oxides ; Wakes

Fluid Flow, General:631.1 ; Electricity: Basic Concepts and Phenomena:701.1 ; Chemical Products Generally:804 ; Materials Science:951

2-s2.0-85125067451

Scopus

1.State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology,School of Microelectronics,Xidian University,Xi'an,710071,China
2.The Key Laboratory of Microelectronics Devices and Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing,100029,China
3.Emerging Device and Chip Laboratory,Hangzhou Institute of Technology,Xidian University,Hangzhou,311200,China
4.College of Materials Science and Engineering,Shenzhen University,Shenzhen,518060,China
5.Core Research Facilities,Southern University of Science and Technology,Shenzhen,518055,China
6.Institute of Microelectronics,Peking University,Beijing,100871,China
7.State Key Laboratory of Asic and System,School of Microelectronics,Fudan University,Shanghai,200433,China
8.The Research Center for Intelligent Chips and Devices,Zhejiang Lab,311121,Hangzhou,China

Zhang，Fan,Luo，Zheng Dong,Yang，Qiyu,et al. Evolution of the Interfacial Layer and Its Impact on Electric-Field-Cycling Behaviors in Ferroelectric Hf1- xZrxO2[J]. ACS Applied Materials & Interfaces,2022,14(8):11028-11037.

Zhang，Fan.,Luo，Zheng Dong.,Yang，Qiyu.,Zhou，Jiuren.,Wang，Jin.,...&Hao，Yue.(2022).Evolution of the Interfacial Layer and Its Impact on Electric-Field-Cycling Behaviors in Ferroelectric Hf1- xZrxO2.ACS Applied Materials & Interfaces,14(8),11028-11037.

Zhang，Fan,et al."Evolution of the Interfacial Layer and Its Impact on Electric-Field-Cycling Behaviors in Ferroelectric Hf1- xZrxO2".ACS Applied Materials & Interfaces 14.8(2022):11028-11037.